Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators

2018 ◽  
Vol 65 (1) ◽  
pp. 34-38 ◽  
Author(s):  
Huiqi Gong ◽  
Wenjun Liao ◽  
En Xia Zhang ◽  
Andrew L. Sternberg ◽  
Michael W. McCurdy ◽  
...  
Keyword(s):  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Mems Resonators ◽  
Dose Effects ◽  
Silicon Based ◽  
Total Ionizing Dose Effects

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions

2019 ◽  
Vol 66 (1) ◽  
pp. 420-427 ◽  
Author(s):  
Pan Wang ◽  
Christopher J. Perini ◽  
Andrew O'Hara ◽  
Huiqi Gong ◽  
Pengfei Wang ◽  
...  
Keyword(s):  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Dose Effects ◽  
Tunneling Junctions ◽  
Total Ionizing Dose Effects

Total Ionizing Dose and Displacement-Damage Effects in Microelectronics

MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 136-140 ◽  
Author(s):  
Charles C. Foster
Keyword(s):  
Lattice Structure ◽  
Radiation Environment ◽  
Device Performance ◽  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Microelectronic Devices ◽  
Dose Effects ◽  
Device Lifetime ◽  
Total Ionizing Dose Effects ◽  
Radiation Passing

AbstractWhen exposed to radiation, the function of microelectronic devices is not only degraded by single-event phenomena but by cumulative effects. Most of the energy lost by radiation passing through semiconductors is through ionization. Buildup of charge in gate oxide layers and of interface and border traps due to ionization result in semipermanent damage to the device. These effects are known as total ionizing dose effects. A fraction of the energy of the radiation passing through semiconductors is lost to displacement of atoms from their sites in the crystal lattice structure. The buildup of displacement damage with radiation exposure causes gradual but permanent changes in device performance and limits device lifetime in a radiation environment. Displacement damage will be discussed in the context of non-ionizing energy loss.

Total ionizing dose effects in junctionless accumulation mode MOSFET

2021 ◽  
Vol 127 (3) ◽  
Author(s):  
Avashesh Dubey ◽  
Rakhi Narang ◽  
Manoj Saxena ◽  
Mridula Gupta
Keyword(s):  
Total Ionizing Dose ◽  
Accumulation Mode ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

scholarly journals Total Ionizing Dose Effects on Piezoelectric Thin-Film Cantilevers With Oxide Electrodes

2017 ◽  
Vol 64 (7) ◽  
pp. 1135-1143 ◽  
Author(s):  
Ryan Q. Rudy ◽  
Kyle M. Grove ◽  
Manuel Rivas ◽  
Jonathon Guerrier ◽  
Cory Cress ◽  
...  
Keyword(s):  
Thin Film ◽  
Total Ionizing Dose ◽  
Oxide Electrodes ◽  
Dose Effects ◽  
Piezoelectric Thin Film ◽  
Total Ionizing Dose Effects

Total ionizing dose effects on Ag/ amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memory

2018 ◽  
Vol 219 ◽  
pp. 340-346 ◽  
Author(s):  
H.J. Song ◽  
W.Z. Yan ◽  
X.L. Zhong ◽  
S.Z. Zheng ◽  
Shengsheng Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Total Ionizing Dose ◽  
Resistive Switching Memory ◽  
Dose Effects ◽  
Total Ionizing Dose Effects ◽  
Switching Memory

Total Ionizing Dose Effects in 3-D NAND Flash Memories

2019 ◽  
Vol 66 (1) ◽  
pp. 48-53 ◽  
Author(s):  
Marta Bagatin ◽  
Simone Gerardin ◽  
Alessandro Paccagnella ◽  
Silvia Beltrami ◽  
Alessandra Costantino ◽  
...  
Keyword(s):  
Nand Flash ◽  
Total Ionizing Dose ◽  
Flash Memories ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

scholarly journals Total Ionizing Dose Effects on a Delay-Based Physical Unclonable Function Implemented in FPGAs

Electronics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 163 ◽  
Author(s):  
Honorio Martin ◽  
Pedro Martin-Holgado ◽  
Yolanda Morilla ◽  
Luis Entrena ◽  
Enrique San-Millan
Keyword(s):  
Low Cost ◽  
Ring Oscillator ◽  
Radiation Environment ◽  
Key Generation ◽  
Total Ionizing Dose ◽  
Space Applications ◽  
Physical Unclonable Functions ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Physical Unclonable Functions (PUFs) are hardware security primitives that are increasingly being used for authentication and key generation in ICs and FPGAs. For space systems, they are a promising approach to meet the needs for secure communications at low cost. To this purpose, it is essential to determine if they are reliable in the space radiation environment. In this work we evaluate the Total Ionizing Dose effects on a delay-based PUF implemented in SRAM-FPGA, namely a Ring Oscillator PUF. Several major quality metrics have been used to analyze the evolution of the PUF response with the total ionizing dose. Experimental results demonstrate that total ionizing dose has a perceptible effect on the quality of the PUF response, but it could still be used for space applications by making some appropriate corrections.

Total ionizing dose effects of novel vertical channel double-gate nMOSFETs

2009 ◽  
Vol 24 (8) ◽  
pp. 085012
Author(s):  
Xia An ◽  
Qing Lu ◽  
Ru Huang ◽  
Wenhua Wang ◽  
Shoubin Xue ◽  
...  
Keyword(s):  
Vertical Channel ◽  
Double Gate ◽  
Total Ionizing Dose ◽  
Dose Effects ◽  
Total Ionizing Dose Effects
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