Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators

2022 ◽  
pp. 1-1
Author(s):  
Wen Sui ◽  
Xu-Qian Zheng ◽  
Ji-Tzuoh Lin ◽  
Jaesung Lee ◽  
Jim L. Davidson ◽  
...  
Keyword(s):  
Displacement Damage ◽  
Mems Resonators

Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators

2018 ◽  
Vol 65 (1) ◽  
pp. 34-38 ◽  
Author(s):  
Huiqi Gong ◽  
Wenjun Liao ◽  
En Xia Zhang ◽  
Andrew L. Sternberg ◽  
Michael W. McCurdy ◽  
...  
Keyword(s):  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Mems Resonators ◽  
Dose Effects ◽  
Silicon Based ◽  
Total Ionizing Dose Effects

scholarly journals High-Q MEMS Resonators for Laser Beam Scanning Displays

Micromachines ◽  
2012 ◽  
Vol 3 (2) ◽  
pp. 509-528 ◽  
Author(s):  
Ulrich Hofmann ◽  
Joachim Janes ◽  
Hans-Joachim Quenzer
Keyword(s):  
Laser Beam ◽  
Beam Scanning ◽  
High Q ◽  
Mems Resonators ◽  
Laser Beam Scanning

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

Atomistic simulation of displacement damage and effective nonionizing energy loss in InAs

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Nanjun Chen ◽  
Danhong Huang ◽  
Eric R. Heller ◽  
David A. Cardimona ◽  
Fei Gao
Keyword(s):  
Energy Loss ◽  
Atomistic Simulation ◽  
Displacement Damage
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