DC Characterization and Validation of the Improved Analytical Model of AlGaN/GaN HEMT

2007 ◽  
Author(s):  
Hasina F. Huq ◽  
Syed K. Islam
Keyword(s):  
Analytical Model ◽  
Gan Hemt ◽  
Dc Characterization

EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI
Keyword(s):  
Monte Carlo ◽  
High Power ◽  
High Frequency ◽  
Small Signal ◽  
Small Signal Analysis ◽  
Gan Hemt ◽  
Full Band ◽  
Cellular Monte Carlo ◽  
Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

2011 ◽  
Vol 58 (10) ◽  
pp. 3622-3625 ◽  
Author(s):  
Sourabh Khandelwal ◽  
Nitin Goyal ◽  
Tor A. Fjeldly
Keyword(s):  
Charge Density ◽  
Analytical Model ◽  
Gan Hemt

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure

2017 ◽  
Vol 32 (3) ◽  
pp. 2189-2202 ◽  
Author(s):  
Dejana Cucak ◽  
Miroslav Vasic ◽  
Oscar Garcia ◽  
Jesus Angel Oliver ◽  
Pedro Alou ◽  
...  
Keyword(s):  
Analytical Model ◽  
Input Output ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemt

scholarly journals Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

2021 ◽  
Author(s):  
Samaneh Sharbati ◽  
Iman Gharibshahian ◽  
Thomas Ebel ◽  
Ali A. Orouji ◽  
Wulf-Toke Franke
Keyword(s):  
Analytical Model ◽  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Dimensional Electron Gas ◽  
Recessed Gate

AbstractA physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.

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