scholarly journals Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

2015 ◽  
Vol 73 ◽  
pp. 012001 ◽  
Author(s):  
K Takhar ◽  
U P Gomes ◽  
K Ranjan ◽  
S Rathi ◽  
D Biswas
Keyword(s):  
Temperature Dependent ◽  
Gan Hemt ◽  
Dc Characterization

EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI
Keyword(s):  
Monte Carlo ◽  
High Power ◽  
High Frequency ◽  
Small Signal ◽  
Small Signal Analysis ◽  
Gan Hemt ◽  
Full Band ◽  
Cellular Monte Carlo ◽  
Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations

2010 ◽  
Vol 7 (10) ◽  
pp. 2445-2449
Author(s):  
Fabio Alessio Marino ◽  
Diego Guerra ◽  
Stephen Goodnick ◽  
David Ferry ◽  
Marco Saraniti
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
State Of The Art ◽  
Gan Hemt ◽  
Cellular Monte Carlo ◽  
Dc Characterization

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

Characterization of GaN HEMT Transistors for DC/DC Converters in Transportation Applications

2020 ◽  
Author(s):  
Rand AL Mdanat ◽  
Ramy Georgious ◽  
Jorge Garcia ◽  
Giulio De Donato ◽  
Fabio Giulii Capponi
Keyword(s):  
Gan Hemt ◽  
Transportation Applications

scholarly journals The G-Protein α-Subunit GasC Plays a Major Role in Germination in the Dimorphic FungusPenicillium marneffei

Genetics ◽  
2003 ◽  
Vol 164 (2) ◽  
pp. 487-499 ◽  
Author(s):  
Sophie Zuber ◽  
Michael J Hynes ◽  
Alex Andrianopoulos
Keyword(s):  
G Protein ◽  
Germination Rate ◽  
Yeast Cells ◽  
Class Iii ◽  
Temperature Dependent ◽  
Gene Encoding ◽  
Α Subunit ◽  
G Protein Α Subunit ◽  
Opportunistic Human Pathogen

AbstractThe opportunistic human pathogen Penicillium marneffei exhibits a temperature-dependent dimorphic switch. At 25°, multinucleate, septate hyphae that can undergo differentiation to produce asexual spores (conidia) are produced. At 37° hyphae undergo arthroconidiation to produce uninucleate yeast cells that divide by fission. This work describes the cloning of the P. marneffei gasC gene encoding a G-protein α-subunit that shows high homology to members of the class III fungal Gα-subunits. Characterization of a ΔgasC mutant and strains carrying a dominant-activating gasCG45R or a dominant-interfering gasCG207R allele show that GasC is a crucial regulator of germination. A ΔgasC mutant is severely delayed in germination, whereas strains carrying a dominant-activating gasCG45R allele show a significantly accelerated germination rate. Additionally, GasC signaling positively affects the production of the red pigment by P. marneffei at 25° and negatively affects the onset of conidiation and the conidial yield, showing that GasC function overlaps with functions of the previously described Gα-subunit GasA. In contrast to the S. cerevisiae ortholog Gpa2, our data indicate that GasC is not involved in carbon or nitrogen source sensing and plays no major role in either hyphal or yeast growth or in the switch between these two forms.

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  
Keyword(s):  
Technology Assessment ◽  
Low Frequency ◽  
Failure Prediction ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemt ◽  
Noise Characterization

A characterization of heam uptake and intracellular distribution by isolated hepatocytes

1985 ◽  
Vol 5 (7) ◽  
pp. 609-614 ◽  
Author(s):  
A. Lodola
Keyword(s):  
Endoplasmic Reticulum ◽  
Specific Binding ◽  
Isolated Hepatocytes ◽  
Intracellular Distribution ◽  
Distribution Data ◽  
Temperature Dependent ◽  
Rat Hepatocyte ◽  
Isolated Rat ◽  
Endoplasmic Reticulum Fraction

The uptake and intracellular distribution of haem by isolated rat hepatocyte suspensions was studied. An increase in cell haem content occurred after a challenge with 5, 10 or 20 μM haem, supplied as methaemalbumin. The rate of haem uptake was temperature dependent; no non-specific binding occurred. Intracellular haem distribution data are consistent with a rapid association of haem with the endoplasmic reticulum fraction prior to its accumulation in the cytosol and at the mitochondrion.

Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

2005 ◽  
Author(s):  
C. Ballesteros ◽  
J. A. Garci´a ◽  
M. I. Orti´z ◽  
R. Rodri´guez ◽  
M. Varela
Keyword(s):  
Tribological Properties ◽  
Low Energy ◽  
Temperature Dependent ◽  
Structural Modifications ◽  
Nanocomposite Layer ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Nitrogen Ion ◽  
Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

Sign in / Sign up

Export Citation Format

Share Document