Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures

AbstractIn this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

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Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.800 ◽

2014 ◽

Vol 778-780 ◽

pp. 800-803 ◽

Cited By ~ 5

Author(s):

Run Hua Huang ◽

Gang Chen ◽

Song Bai ◽

Rui Li ◽

Yun Li ◽

...

Keyword(s):

Numerical Simulations ◽

Breakdown Voltage ◽

Epitaxial Layer ◽

Doping Level ◽

Electrical Characteristics ◽

Edge Termination ◽

Fabrication And Characterization ◽

Drift Layer

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×1014cm−3. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at JF=80 A/cm2

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Fabrication and characterization of aluminum-doped zinc oxide Schottky diodes on n-GaN

Current Applied Physics ◽

10.1016/j.cap.2012.04.029 ◽

2012 ◽

Vol 12 (6) ◽

pp. 1536-1540 ◽

Cited By ~ 7

Author(s):

T. Han ◽

Y. Shi ◽

H. Wu ◽

C. Liu

Keyword(s):

Zinc Oxide ◽

Schottky Diodes ◽

Aluminum Doped Zinc Oxide ◽

Fabrication And Characterization

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Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination

Microelectronics Reliability ◽

10.1016/j.microrel.2004.07.042 ◽

2004 ◽

Vol 44 (9-11) ◽

pp. 1473-1478 ◽

Cited By ~ 7

Keyword(s):

Breakdown Voltage ◽

Schottky Diodes ◽

Plate Edge ◽

Field Plate ◽

Edge Termination

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A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004786 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 577-583

Author(s):

Anand V. Sampath ◽

Mira Misra ◽

Kshitij Seth ◽

Yuri. Fedyunin ◽

Hock M. Ng ◽

...

Keyword(s):

Comparative Study ◽

Reverse Bias ◽

Schottky Diodes ◽

Forward Bias ◽

Etch Pits ◽

Sapphire Substrates ◽

Fabrication And Characterization

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

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