Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

Author(s):  
S.C. Song ◽  
H.F. Luan ◽  
C.H. Lee ◽  
A.Y. Mao ◽  
S.J. Lee ◽  
...  
1999 ◽  
Vol 48 (1-4) ◽  
pp. 55-58 ◽  
Author(s):  
S.C. Song ◽  
H.F. Luan ◽  
C.H. Lee ◽  
A.Y. Mao ◽  
S.J. Lee ◽  
...  

1995 ◽  
Vol 387 ◽  
Author(s):  
L. K. Han ◽  
M. Bhat ◽  
J. Yan ◽  
D. Wristers ◽  
D. L. Kwong

AbstractThis paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET's, the hot-carrier immunity of N-channel MOSFET's with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.


1994 ◽  
Author(s):  
G. W. Yoon ◽  
J. Yan ◽  
L. K. Han ◽  
J. Kim ◽  
D. L. Kwong

2001 ◽  
Vol 22 (6) ◽  
pp. 260-262 ◽  
Author(s):  
C.H. Chen ◽  
Y.K. Fang ◽  
C.W. Yang ◽  
S.F. Ting ◽  
Y.S. Tsair ◽  
...  

1999 ◽  
Vol 567 ◽  
Author(s):  
H. F. Luan ◽  
S. J. Lee ◽  
C. H. Lee ◽  
A. Y. Mao ◽  
R. Vrtis ◽  
...  

ABSTRACTIn this paper, ultra thin CVD Ta2O5 stacked gate dielectrics (Teq∼14Å-22Å) was fabricated by in-situ RTP processing. The leakage current of Ta2O5 devices is 103× lower leakage current compared to SiO2 of identical thickness for devices with Teq between 18Å-22Å. While Teq<18Å, the leakage current follows same train and J∼10−3A/cm2 for Ta2O5 stacked gate dielectrics with Teq=14Å. Superior interface properties and reliability have been obtained.


2019 ◽  
Vol 52 (30) ◽  
pp. 305105
Author(s):  
Liang Cheng ◽  
Weizong Xu ◽  
Danfeng Pan ◽  
Youhua Zhu ◽  
Fangfang Ren ◽  
...  

Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.


2021 ◽  
Vol 13 (11) ◽  
pp. 2188
Author(s):  
Salvatore Marullo ◽  
Jaime Pitarch ◽  
Marco Bellacicco ◽  
Alcide Giorgio di Sarra ◽  
Daniela Meloni ◽  
...  

Air–sea heat fluxes are essential climate variables, required for understanding air–sea interactions, local, regional and global climate, the hydrological cycle and atmospheric and oceanic circulation. In situ measurements of fluxes over the ocean are sparse and model reanalysis and satellite data can provide estimates at different scales. The accuracy of such estimates is therefore essential to obtain a reliable description of the occurring phenomena and changes. In this work, air–sea radiative fluxes derived from the SEVIRI sensor onboard the MSG satellite and from ERA5 reanalysis have been compared to direct high quality measurements performed over a complete annual cycle at the ENEA oceanographic observatory, near the island of Lampedusa in the Central Mediterranean Sea. Our analysis reveals that satellite derived products overestimate in situ direct observations of the downwelling short-wave (bias of 6.1 W/m2) and longwave (bias of 6.6 W/m2) irradiances. ERA5 reanalysis data show a negligible positive bias (+1.0 W/m2) for the shortwave irradiance and a large negative bias (−17 W/m2) for the longwave irradiance with respect to in situ observations. ERA5 meteorological variables, which are needed to calculate the air–sea heat flux using bulk formulae, have been compared with in situ measurements made at the oceanographic observatory. The two meteorological datasets show a very good agreement, with some underestimate of the wind speed by ERA5 for high wind conditions. We investigated the impact of different determinations of heat fluxes on the near surface sea temperature (1 m depth), as determined by calculations with a one-dimensional numerical model, the General Ocean Turbulence Model (GOTM). The sensitivity of the model to the different forcing was measured in terms of differences with respect to in situ temperature measurements made during the period under investigation. All simulations reproduced the true seasonal cycle and all high frequency variabilities. The best results on the overall seasonal cycle were obtained when using meteorological variables in the bulk formulae formulations used by the model itself. The derived overall annual net heat flux values were between +1.6 and 40.4 W/m2, depending on the used dataset. The large variability obtained with different datasets suggests that current determinations of the heat flux components and, in particular, of the longwave irradiance, need to be improved. The ENEA oceanographic observatory provides a complete, long-term, high resolution time series of high quality in situ observations. In the future, more similar sites worldwide will be needed for model and satellite validations and to improve the determination of the air–sea exchange and the understanding of related processes.


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