Device design guideline for steep slope ferroelectric FET using negative capacitance in sub-0.2V operation: Operation speed, material requirement and energy efficiency

2015 ◽  
Author(s):  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
Keyword(s):  
Energy Efficiency ◽  
Steep Slope ◽  
Negative Capacitance ◽  
Device Design ◽  
Design Guideline ◽  
Operation Speed ◽  
Material Requirement

Design Guideline for Complementary Heterostructure Tunnel FETs With Steep Slope and Improved Output Behavior

2016 ◽  
Vol 37 (1) ◽  
pp. 20-23 ◽  
Author(s):  
Chunlei Wu ◽  
Ru Huang ◽  
Qianqian Huang ◽  
Jiaxin Wang ◽  
Yangyuan Wang
Keyword(s):  
Steep Slope ◽  
Design Guideline ◽  
Tunnel Fets ◽  
Output Behavior

scholarly journals Resistance analysis and device design guideline for graphene RF transistors

2D Materials ◽  
2015 ◽  
Vol 2 (3) ◽  
pp. 034011 ◽  
Author(s):  
Seul Ki Hong ◽  
Sang Chul Jeon ◽  
Wan Sik Hwang ◽  
Byung Jin Cho
Keyword(s):  
Device Design ◽  
Design Guideline ◽  
Resistance Analysis

Design of Steep Slope Negative Capacitance FinFETs for Dense Integration: Matching of Channel and Ferroelectric Capacitances

2017 ◽  
Author(s):  
H. Ota ◽  
J. Hattori ◽  
H. Asai ◽  
T. Ikegami ◽  
K. Fukuda ◽  
...  
Keyword(s):  
Steep Slope ◽  
Negative Capacitance

Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FD03 ◽  
Author(s):  
Hiroyuki Ota ◽  
Junichi Hattori ◽  
Hidehiro Asai ◽  
Tsutomu Ikegami ◽  
Koichi Fukuda ◽  
...  
Keyword(s):  
Steep Slope ◽  
Negative Capacitance ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

2020 ◽  
Vol 8 ◽  
pp. 608-613
Author(s):  
Chankeun Yoon ◽  
Jinhong Min ◽  
Jaemin Shin ◽  
Changhwan Shin
Keyword(s):  
Device Design ◽  
Design Guideline ◽  
Nanoelectromechanical System
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