High-mobility High-Ge-Content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
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1994 ◽
Vol 52
◽
pp. 700-701
Keyword(s):
1994 ◽
Vol 52
◽
pp. 550-551
2007 ◽
Vol 2007
◽
pp. 128-129
1998 ◽
Vol 08
(PR3)
◽
pp. Pr3-57-Pr3-60
2011 ◽
Vol 183
(S 01)
◽
2020 ◽
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