Low Energy Free-Carrier Generation in Nanoscale Si-Layered Systems: Experimental Evidence

2006 ◽  
Author(s):  
Zbigniew Kuznicki ◽  
Patrick Meyrueis
Keyword(s):  
Experimental Evidence ◽  
Free Carrier ◽  
Low Energy ◽  
Layered Systems ◽  
Carrier Generation

Free-Carrier Generation via Exciton-Phonon and Exciton-Impurity Interaction in Ge Crystals

1976 ◽  
Vol 74 (1) ◽  
pp. 81-89 ◽  
Author(s):  
B. V. Novikov ◽  
N. S. Sokolov ◽  
S. V. Gastev
Keyword(s):  
Free Carrier ◽  
Carrier Generation ◽  
Impurity Interaction

Description of the Atomic Positions Around Interfacial Ledges in Terms of the Somigliana Dislocation Model

1991 ◽  
Vol 238 ◽  
Author(s):  
R. Bonnet ◽  
M. Loubradou
Keyword(s):  
Experimental Evidence ◽  
Displacement Field ◽  
Elastic Field ◽  
Point Of View ◽  
Low Energy ◽  
Elastic Displacement ◽  
Dislocation Model ◽  
Structural Units ◽  
Hexagonal Crystals ◽  
Translation State

ABSTRACTIn many materials, crystalline interfaces are facetted. The experimental evidence is that on each side of an interfacial ledge, or along the facets meeting along a common line, low energy atomic structural units are preserved which accommodate elastically angular or/and length misfit(s). Each facet can be considered as a Somigliana dislocation (SD) whose core is extended on the facet. The elastic displacement field of a SD is derived in an anisotropic continuum, for any orientation of the facet relative to a given Cartesian frame. From an atomic point of view, the translation state of the two crystals on each side of the facet is defined. The dislocation content attached to a ledge or a dihedral angle formed by two joining facets along a common side is also analyzed. The local elastic field related to these cases are derived and applications are presented for depicting the positions of the atomic columns in theoretical plots. Comparisons are made with some other theoretical works and HRTEM images. Examples illustrate the application of the Somigliana model to grain boundaries in hexagonal crystals (Mg, WC), and an interphase interface Ni3AI/Ni3Nb.

Free Carrier Generation and Recombination in Polymer-Wrapped Semiconducting Carbon Nanotube Films and Heterojunctions

2013 ◽  
Vol 4 (21) ◽  
pp. 3550-3559 ◽  
Author(s):  
Dominick J. Bindl ◽  
Andrew J. Ferguson ◽  
Meng-Yin Wu ◽  
Nikos Kopidakis ◽  
Jeffrey L. Blackburn ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Free Carrier ◽  
Carrier Generation ◽  
Nanotube Films

scholarly journals DUALITY IN SUPERSYMMETRIC YANG–MILLS AND THE QUANTUM HALL EFFECT

2006 ◽  
Vol 21 (20) ◽  
pp. 1567-1585
Author(s):  
BRIAN P. DOLAN
Keyword(s):  
Gauge Theory ◽  
Hall Effect ◽  
Experimental Evidence ◽  
Quantum Hall Effect ◽  
Modular Group ◽  
Quantum Hall ◽  
Low Energy ◽  
Kinetic Term ◽  
Yang Mills ◽  
Topological Parameter

The evidence for the parallel rôles played by the modular group in [Formula: see text] supersymmetric Yang–Mills in (3+1) dimensions and the quantum Hall effect in (2+1) dimensions is reviewed. In both cases a subgroup of the full modular group acts as a map between different low energy phases of the theory, parametrised by a complex parameter in the upper-half-complex plane whose real part is a topological parameter and whose imaginary part is the coupling associated the kinetic term of the effective U(1) gauge theory. In the case of the quantum Hall effect experimental evidence in favour of the modular action is also reviewed.

DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range

1996 ◽  
Author(s):  
A. E. Vidavskii ◽  
Valeri I. Kovalev ◽  
V. M. Raukhman
Keyword(s):  
Free Carrier ◽  
Carrier Generation ◽  
Two Photon

Plasmooptoelectronic tuning of optical properties and SERS response of ordered silver grating by free carrier generation

RSC Advances ◽  
2015 ◽  
Vol 5 (113) ◽  
pp. 92869-92877 ◽  
Author(s):  
Y. Kalachyova ◽  
D. Alkhimova ◽  
M. Kostejn ◽  
P. Machac ◽  
V. Svorcik ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Current ◽  
Free Carrier ◽  
Carrier Generation

Electrical current induced reversible tuning of the optical properties of ordered silver gratings.

Photo-oxidation and the Absence of Photodarkening in Ge2Sb2Te5 Phase Change Material

2006 ◽  
Vol 918 ◽  
Author(s):  
Bong-Sub Lee ◽  
Ying Xiao ◽  
Stephen G. Bishop ◽  
John R. Abelson ◽  
Simone Raoux ◽  
...  
Keyword(s):  
Phase Change ◽  
Secondary Ion Mass Spectrometry ◽  
Free Carrier ◽  
Carrier Generation ◽  
Photo Oxidation ◽  
Optical Irradiation ◽  
The Mean ◽  
Change Material ◽  
Secondary Ion ◽  
Change Memory

AbstractGe2Sb2Te5 is under intense investigation for phase-change memory devices, including rewriteable DVDs where optical illumination is used to switch between the glassy and crystalline states. We investigate the influence of optical irradiation on amorphous phase. Many chalcogenides display photo-oxidation, photodarkening or photo-bleaching, but little has been reported on the Ge-Sb-Te system. Using spectroscopic ellipsometry (SE) and secondary ion mass spectrometry, we determine that the samples have a strong tendency to photo-oxidize; if this is not accounted for, then the analysis of SE data appears to show photodarkening. Other authors recently reported photodarkening in nonstoichiometric GexSb20-xTe80 [Pamukchieva et al., Proc. SPIE 5581, 608 (2004); Pamukchieva et al., J. Optoelectron. Adv. Mater 7, 1277 (2005)], but our analysis suggests that the changes were also the result of photo-oxidation. The oxide has lower value of (n, k) than Ge2Sb2Te5, and can be etched by hydrofluoric acid or water. The photo-oxidation is presumably the result of free carrier generation in the Ge2Sb2Te5. Our observation of negligible photodarkening is consistent with previous works that found less photodarkening in tellurides compared with selenides or sulfides, and that an increase in the mean coordination number, here by Ge addition, further reduces the photodarkening effect.

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