Power Cycling Capabilities of Bond Buffer Technologies for Wide Bandgap Power Devices

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

Download Full-text

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

Microelectronics Reliability ◽

10.1016/j.microrel.2018.07.041 ◽

2018 ◽

Vol 88-90 ◽

pp. 462-469 ◽

Cited By ~ 3

Author(s):

N. Dornic ◽

A. Ibrahim ◽

Z. Khatir ◽

S.H. Tran ◽

J.-P. Ousten ◽

...

Keyword(s):

Degradation Mechanisms ◽

Power Devices ◽

Power Cycling

Download Full-text

Wide bandgap compound semiconductors for superior high-voltage power devices

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297113 ◽

2002 ◽

Cited By ~ 17

Author(s):

T.P. Chow ◽

R. Tyagi

Keyword(s):

High Voltage ◽

Compound Semiconductors ◽

Wide Bandgap ◽

Power Devices

Download Full-text

Wide Bandgap Semiconductor Power Devices

MRS Proceedings ◽

10.1557/proc-483-89 ◽

1997 ◽

Vol 483 ◽

Cited By ~ 18

Author(s):

T. P. Chow ◽

N. Ramungul ◽

M. Ghezzo

Keyword(s):

High Voltage ◽

Wide Bandgap ◽

Power Device ◽

Experimental Demonstration ◽

Power Devices ◽

Process Technology ◽

Power Semiconductor ◽

Wide Bandgap Semiconductor ◽

Simulated Performance ◽

Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

Download Full-text