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Wide Bandgap Power and Energy Devices and Applications III
Latest Publications
TOTAL DOCUMENTS
16
(FIVE YEARS 1)
H-INDEX
1
(FIVE YEARS 0)
Published By SPIE
9781510620797, 9781510620803
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Hyperspectral imaging using CCD imager and broadband energy source for agricultural grading: implementation
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2323721
◽
2019
◽
Author(s):
Amrita Sahu
◽
Henry Dante
◽
Evan Haase
◽
Jerry W. Morris
Keyword(s):
Energy Source
◽
Hyperspectral Imaging
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Front Matter: Volume 10754
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2514605
◽
2018
◽
Keyword(s):
Matter Volume
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High-speed GaN-based micro-scale light-emitting diodes for visible-light communication (Conference Presentation)
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2323266
◽
2018
◽
Author(s):
Daniel F. Feezell
◽
Morteza Monavarian
◽
Arman Rashidi
◽
Mohsen Nami
◽
Andrew Aragon
Keyword(s):
Visible Light
◽
High Speed
◽
Light Emitting Diodes
◽
Visible Light Communication
◽
Light Emitting
◽
Micro Scale
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Growth of aluminum nitride on silicon by metalorganic chemical vapor deposition (Conference Presentation)
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2323754
◽
2018
◽
Author(s):
Andrew P. Lange
◽
S. Mahajan
Keyword(s):
Chemical Vapor Deposition
◽
Aluminum Nitride
◽
Vapor Deposition
◽
Metalorganic Chemical Vapor Deposition
◽
Chemical Vapor
◽
Metalorganic Chemical
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Ammonothermal growth of bulk GaN crystals (Conference Presentation)
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2323683
◽
2018
◽
Author(s):
Siddha Pimputkar
Keyword(s):
Bulk Gan
◽
Ammonothermal Growth
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LPCVD Grown β-Ga2O3: Materials and devices (Conference Presentation)
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2322940
◽
2018
◽
Author(s):
Hongping Zhao
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Porous silicon devices and applications (Conference Presentation)
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2323201
◽
2018
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Author(s):
Girija Gaur
◽
Dimitry Koktysh
◽
Sharon Weiss
◽
Shuren Hu
Keyword(s):
Porous Silicon
◽
Silicon Devices
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A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation)
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2323378
◽
2018
◽
Author(s):
Jianyi Gao
◽
Zheng Xu
◽
Siwei Li
◽
Srabanti Chowdhury
Keyword(s):
Schottky Diode
◽
Temperature Dependent
◽
Current Voltage
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Design and performance study of a DC–DC ZETA converter with wide bandgap power devices
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2322915
◽
2018
◽
Author(s):
Ali M. S. Al-bayati
◽
Salah S. Alharbi
◽
Saleh S. Alharbi
◽
Mohammad A. Matin
Keyword(s):
Wide Bandgap
◽
Performance Study
◽
Power Devices
◽
And Performance
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Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices
Wide Bandgap Power and Energy Devices and Applications III
◽
10.1117/12.2322005
◽
2018
◽
Cited By ~ 2
Author(s):
Isaac Stricklin
◽
Morteza Monavarian
◽
Andrew Aragon
◽
Greg Pickrell
◽
Mary Crawford
◽
...
Keyword(s):
High Power
◽
Electronic Devices
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