Analytical prediction of the fatigue limit for axisymmetric round bars with rough surface morphology

The Pb-based solder used in microelectronics industry is becoming an environmental issue. To understand the wetting behavior of solders with and without Pb, we have studied the surface morphology and wetting reaction of eutectic SnBi, eutectic SnPb, and pure Sn on Cu through the measurements of wetting angle change and wetting tip stability by SEM and EDX. The wetting angle remains constant after the initial spread, but the eutectic SnPb/Cu continues to react and forms a reaction band in front of the solder edge as well as intermetallic compounds at the interface. For eutectic SnBi/Cu, there is no reaction at the wetting tip, and the wetting angle does not change much; however, the interfacial reaction between eutectic SnBi and Cu forms intermetallic compounds at the solder joint; the wetting tip is not in a static equilibrium. A rough surface and edge was observed on the eutectic SnBi/Cu joint, but the eutectic SnPb/Cu has a smoother surface and edge.

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Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper

The European Physical Journal Applied Physics ◽

10.1051/epjap/2019190080 ◽

2019 ◽

Vol 87 (3) ◽

pp. 31301 ◽

Cited By ~ 2

Author(s):

Hicham El Azrak ◽

Abdessamad Hassani ◽

Abdelhadi Makan ◽

Fouad Eddiai ◽

Khalid Sbiaai ◽

...

Keyword(s):

Thin Film ◽

Molecular Dynamics ◽

Surface Roughness ◽

Surface Morphology ◽

Md Simulation ◽

Dynamics Simulation ◽

Embedded Atom Method ◽

Homoepitaxial Growth ◽

Embedded Atom ◽

Rough Surface Morphology

In this paper, molecular dynamics (MD) simulation of surface morphology during homoepitaxial growth of Copper was investigated. For this purpose, simulations of Cu deposition on the Cu(111) substrate with an incidence energy of 0.06 eV at 300K were performed using the embedded-atom method (EAM). The grown thin film on Cu(111) reveled a rough surface morphology. During deposition, the important fraction of atoms intended for the upper layers undergone a rising rate of about 40% starting from the 2nd period and continued to increase until 65%, while the lower level reached a permanent rate of only 25% by the 4th period. Otherwise, except at the first layer level, the lower layers are incomplete. This void in the lower layers has favored the growth of the upper layers until a rate of 143% and has accelerated their time appearance. Th incidence energy has favored the filling of lower layers by reducing this surface roughness. However, the temperature effect needs more relaxation time to fill the lower layers.

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Drop splashing on a rough surface: How surface morphology affects splashing threshold

Applied Physics Letters ◽

10.1063/1.4873338 ◽

2014 ◽

Vol 104 (16) ◽

pp. 161608 ◽

Cited By ~ 34

Author(s):

Hyungmo Kim ◽

Usung Park ◽

Chan Lee ◽

Hyungdae Kim ◽

Moo Hwan Kim ◽

...

Keyword(s):

Surface Morphology ◽

Rough Surface

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Studies of PQ-100(TM) Polyquinoline Film for Multichip Module(MCM) Applications

MRS Proceedings ◽

10.1557/proc-264-161 ◽

1992 ◽

Vol 264 ◽

Cited By ~ 2

Author(s):

Kyung W. Paik ◽

Herbert S. Cole ◽

Neil H. Hendricks

Keyword(s):

Surface Morphology ◽

Chemical Bonding ◽

Etch Rate ◽

Peel Strength ◽

Multichip Module ◽

Good Adhesion ◽

Compound Formation ◽

Poor Adhesion ◽

Rough Surface Morphology ◽

Weak Chemical

AbstractOxygen and O2+CF4 RIE showed faster etch rate of PQ-100 film than nonoxygen containing RIE, and caused rough surface morphology. Ti shows good adhesion to the PQ-100 film because of Ti-O and possible Ti-N compound formation at the interface. No diffusion of Ti and Ti-containing precipitates were observed at the Ti/PQ interface even at temperatures of 250 °C. In contrast to the Ti/PQ interface, Cu showed very poor adhesion to the PQ film because of weak chemical bonding. Cu reaction compounds were not observed at the interface at the 250 °C annealing. Ti adhesion to the PQ-100 film was good for control, RIE modified, and water-boiled cases. Initial studies suggest a reduction in peel strength at 250 °C annealing, although this topic must be further addressed to understand the exact mechanism.

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Ion Bombardment Effect on the Properties of a-Si:H

MRS Proceedings ◽

10.1557/proc-38-417 ◽

1984 ◽

Vol 38 ◽

Cited By ~ 2

Author(s):

B. Drevillon ◽

J. P. M. Schmitt

Keyword(s):

Surface Morphology ◽

Hydrogen Evolution ◽

Rough Surface ◽

Spectroscopic Ellipsometry ◽

Film Growth ◽

Ion Bombardment ◽

Sharp Interface ◽

Charged Species ◽

Amorphous Network ◽

Moderate Energy

AbstractIn a low pressure multipole plasma, the energy of the charged species impinging on the substrate can be varied electrostatically. Spectroscopic ellipsometry is used to study the film growth and the surface morphology. Hydrogen evolution is used to investigate the release of hydrogen from the amorphous network. Moderate energy ion bombardment (Eion ‰ 50 eV) is shown to favour the formation of homogeneous high density films with a sharp interface. Weak ion bombardment (Eion ‰ 20 eV) results in a microscopically rough surface. The material strucbural variations are evidenced by hydrogen evolution kinetics.

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