scholarly journals Effect of heat treatment on the surface chemical structure of glass: Oxygen speciation from in situ XPS analysis

2017 ◽  
Vol 101 (2) ◽  
pp. 644-656 ◽  
Author(s):  
Joy Banerjee ◽  
Vincent Bojan ◽  
Carlo G. Pantano ◽  
Seong H. Kim
2021 ◽  
Vol 542 ◽  
pp. 148684
Author(s):  
Jordi Fraxedas ◽  
Max Schütte ◽  
Guillaume Sauthier ◽  
Massimo Tallarida ◽  
Salvador Ferrer ◽  
...  

2019 ◽  
Vol 520 ◽  
pp. 1-5 ◽  
Author(s):  
Tingwen Yan ◽  
Donghua Xie ◽  
Zhilei Chen ◽  
Ruilong Yang ◽  
Kangwei Zhu ◽  
...  

1993 ◽  
Vol 70-71 ◽  
pp. 613-618 ◽  
Author(s):  
N. Couchman ◽  
C. Pacifico ◽  
G. Turban ◽  
B. Grolleau

1991 ◽  
Vol 24 (20) ◽  
pp. 5508-5514 ◽  
Author(s):  
M. C. Davies ◽  
R. A. P. Lynn ◽  
J. F. Watts ◽  
A. J. Paul ◽  
J. C. Vickerman ◽  
...  

2020 ◽  
Vol 56 (70) ◽  
pp. 10147-10150
Author(s):  
Ryo Toyoshima ◽  
Takahisa Tanaka ◽  
Taro Kato ◽  
Ken Uchida ◽  
Hiroshi Kondoh

Changes in surface chemical state of a resistivity-based Pt thin-film sensor for H2 gas were observed under working conditions with direct in situ spectroscopy.


2015 ◽  
Vol 331 ◽  
pp. 248-253 ◽  
Author(s):  
Qiang Jing ◽  
Hang Yang ◽  
Wancheng Li ◽  
Guoguang Wu ◽  
Yuantao Zhang ◽  
...  

1993 ◽  
Vol 334 ◽  
Author(s):  
T. K. Chu ◽  
F. Santiago ◽  
M. Stumborg ◽  
C. A. Huber

AbstractThe epitaxial growth of an insulator, BaF2, and semiconductors of the II-VI and the IV-VI families on Si substrates were carried out. In-situ XPS analyses during the growth of the first monolayers were used to study the surface chemical reactions involved. The results point to a common ingredient in these growths: that the Ba atoms are involved in forming interfacial compounds that would facilitate the heteroepitaxies. In the case of BaF2/Si, a BaSi2 compound has been identified previously. In the case of PbTe and CdTe, the heteroepitaxies on Si are made possible with the BaSi2 buffer. As a result, the impinging semiconductor molecules are broken up, and the metallic elements are ejected from the BaSi2 surface. A new surface chemical, BaTe, is thereby formed. These surface Ba compounds appear to be the dominant factors as the crystal orientations of the BaF2, CdTe, and PbTe layers are independent of those of the Si substrates.


2017 ◽  
Vol 426 ◽  
pp. 852-855 ◽  
Author(s):  
Jacek Balcerzak ◽  
Wiktor Redzynia ◽  
Jacek Tyczkowski
Keyword(s):  

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