In situ XPS analysis of the electronic structure of silicon and titanium thin films exposed to low-pressure inductively-coupled RF plasma

2021 ◽  
Vol 542 ◽  
pp. 148684
Author(s):  
Jordi Fraxedas ◽  
Max Schütte ◽  
Guillaume Sauthier ◽  
Massimo Tallarida ◽  
Salvador Ferrer ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Low Pressure ◽  
Rf Plasma ◽  
Xps Analysis ◽  
Inductively Coupled ◽  
In Situ Xps ◽  
Titanium Thin Films

scholarly journals Effect of heat treatment on the surface chemical structure of glass: Oxygen speciation from in situ XPS analysis

2017 ◽  
Vol 101 (2) ◽  
pp. 644-656 ◽  
Author(s):  
Joy Banerjee ◽  
Vincent Bojan ◽  
Carlo G. Pantano ◽  
Seong H. Kim
Keyword(s):  
Heat Treatment ◽  
Chemical Structure ◽  
Xps Analysis ◽  
Surface Chemical ◽  
In Situ Xps

In Situ Rheed and Hrem Study of Initial Stages of Interfacial Reactions of Uhv Deposited Titanium Thin Films on Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
M. H. Wang ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Energy ◽  
Interfacial Reactions ◽  
Silicide Formation ◽  
High Energy Electron ◽  
Transmission Electron ◽  
Titanium Thin Films ◽  
Amorphous Interlayer

ABSTRACTThe initial stages of interfacial reactions of ultrahigh vacuum (UHV) deposited Ti thin films on silicon have been studied by in-situ reflected high energy electron diffraction (RHEED) and transmission electron microscopy (TEM).An amorphous interlayer was found to form during the deposition of the first 1.7-nm-thick Ti layer. In samples annealed at 450 °C for 30–120 min, Ti5Si3, located at the Ti/a-interlayer interface, was identified to be the first nucleated phase. Ti5Si3, Ti5Si4, TiSi and C49-TiSi2 were observed in samples annealed at 475 °C for 30 and 60 min as well as at 500 °C for 10 and 20 min. Fundamental issues in silicide formation are discussed in light of the discovery of the formation of the amorphous interlayer and as many as four different silicide phases in the initial stages of interfacial reactions of UHV deposited Ti thin films on silicon.

scholarly journals In-Situ Ellipsometric Analysis of Formation Process of Al2O3 Thin Films in Low-Pressure CVD

1993 ◽  
Vol 57 (9) ◽  
pp. 1041-1046 ◽  
Author(s):  
Tetsu Go ◽  
Nobuyoshi Hara ◽  
Katsuhisa Sugimoto
Keyword(s):  
Thin Films ◽  
Formation Process ◽  
Low Pressure

In Situ Electronic Structure Study of Epitaxial Niobium Thin Films by Angle-Resolved Photoemission Spectroscopy

2017 ◽  
Vol 34 (7) ◽  
pp. 077402 ◽  
Author(s):  
Pai Xiang ◽  
Ji-Shan Liu ◽  
Ming-Ying Li ◽  
Hai-Feng Yang ◽  
Zheng-Tai Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Structure Study ◽  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy

scholarly journals New insight on early oxidation stages of austenitic stainless steel from in situ XPS analysis on single-crystalline Fe–18Cr–13Ni

2018 ◽  
Vol 140 ◽  
pp. 205-216 ◽  
Author(s):  
Li Ma ◽  
Frédéric Wiame ◽  
Vincent Maurice ◽  
Philippe Marcus
Keyword(s):  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Xps Analysis ◽  
Single Crystalline ◽  
In Situ Xps ◽  
Early Oxidation Stages

Initial oxidation of U3Si2 studied by in-situ XPS analysis

2019 ◽  
Vol 520 ◽  
pp. 1-5 ◽  
Author(s):  
Tingwen Yan ◽  
Donghua Xie ◽  
Zhilei Chen ◽  
Ruilong Yang ◽  
Kangwei Zhu ◽  
...  
Keyword(s):  
Xps Analysis ◽  
Initial Oxidation ◽  
In Situ Xps

In situ XPS analysis of the tungsten/sublayer interface after SF6 based reactive ion etching

1993 ◽  
Vol 70-71 ◽  
pp. 613-618 ◽  
Author(s):  
N. Couchman ◽  
C. Pacifico ◽  
G. Turban ◽  
B. Grolleau
Keyword(s):  
Reactive Ion Etching ◽  
Xps Analysis ◽  
Ion Etching ◽  
In Situ Xps

Low pressure deposition of LixZnyO thin films by means of RF plasma jet system

2004 ◽  
Vol 447-448 ◽  
pp. 656-662 ◽  
Author(s):  
Z Hubicka
Keyword(s):  
Thin Films ◽  
Plasma Jet ◽  
Low Pressure ◽  
Rf Plasma
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