scholarly journals Influence of codoping with Hf and La on grain‐boundary transport in alumina

2020 ◽  
Vol 104 (1) ◽  
pp. 514-523
Author(s):  
Qian Wu ◽  
Zhiyang Yu ◽  
Yan Wang ◽  
David Diercks ◽  
Brian P. Gorman ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundary Transport

Effect of oxygen partial pressure on grain-boundary transport in alumina

2018 ◽  
Vol 153 ◽  
pp. 205-213 ◽  
Author(s):  
Yan Wang ◽  
Helen M. Chan ◽  
Jeffrey M. Rickman ◽  
Martin P. Harmer
Keyword(s):  
Grain Boundary ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Effect Of Oxygen ◽  
Grain Boundary Transport

Diffusion and Electromigration of Cu in Single Crystal Al Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
V. T. Srikar ◽  
C. V. Thompson
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Concentration Profile ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Effect Of Temperature ◽  
Cu Alloys ◽  
Grain Structures ◽  
Kinetics Of ◽  
Grain Boundary Transport

AbstractThe electromigration-induced transport properties of Cu in Al-Cu alloys, and their effect on electromigration lifetimes in interconnects with bamboo grain structures are not well understood. To isolate and study the mechanisms and kinetics of Cu diffusion and electromigration in interconnects for which grain boundary transport is not dominant, we have developed a test structure consisting of parallel Al single crystal lines, with every alternate line terminating in contact pads. Cu is locally added to the same regions in all the lines, and the effect of temperature and electric field can be simultaneously characterized by analyzing the Cu concentration profile measured using electron-probe microanalysis. Comparison of the calculated values of diffusivities with the diffusivity of Cu through the Al lattice, and through dislocation cores in Al, suggests that the path of diffusion of Cu in Al single crystals is along the Al/AlOx interface.

Grain boundary transport in sputter-deposited nanometric thin films of lithium manganese oxide

Nano Energy ◽  
2018 ◽  
Vol 43 ◽  
pp. 340-350 ◽  
Author(s):  
Juliane Mürter ◽  
Susann Nowak ◽  
Efi Hadjixenophontos ◽  
Yug Joshi ◽  
Guido Schmitz
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Manganese Oxide ◽  
Lithium Manganese Oxide ◽  
Lithium Manganese ◽  
Sputter Deposited ◽  
Grain Boundary Transport

Grain and grain boundary transport in BaCe0.5Zr0.3Ln0.2O3−δ (Ln – Y or lanthanide) electrolytes attractive for protonic ceramic fuel cells application

2017 ◽  
Vol 366 ◽  
pp. 161-168 ◽  
Author(s):  
N. Danilov ◽  
E. Pikalova ◽  
J. Lyagaeva ◽  
B. Antonov ◽  
D. Medvedev ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Grain Boundary ◽  
Ceramic Fuel ◽  
Ceramic Fuel Cells ◽  
Grain Boundary Transport

High-spatial-resolution x-ray microanalysis of Al-2wt.% Cu aluminum thin films

1989 ◽  
Vol 47 ◽  
pp. 216-217
Author(s):  
A. D. Romig ◽  
D. R. Frear ◽  
T. J. Headley
Keyword(s):  
Integrated Circuits ◽  
Grain Boundary ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Copper Alloys ◽  
X Ray ◽  
Cu Films ◽  
Grain Boundary Transport ◽  
Film Form ◽  
Si Wafer

Aluminum - 2 wt.% copper alloys are commonly used in thin film form as interconnect metallization lines for integrated circuits. Experience has shown that the addition of the Cu to the Al, albeit at a decrease in conductivity, makes the metallizations more resistant to failure by electromigration. However, the mechanism by which Cu increases the resistance to electromigration has never been positively identified. One theory proposes that Cu coats the Al grain boundaries (boundaries are enriched in Cu) and retards grain boundary diffusion thereby reducing electromigration. Another theory suggests that a continuous thin layer of CuAl2 forms along the boundaries also reducing grain boundary transport and therefore the tendency to electromigrate. Recently, Frear et al. have reported on a detailed set of experiments to examine these theories from a microstructural viewpoint. Here, the details of the high spatial resolution microanalysis done to support the study of Fear, et al. are reported.Al- 2wt.% Cu was magnetron sputtered onto a borosilicate glass (BSG) coated (100) Si wafer. The Al-Cu films were sputtered at room temperature from a single source under an argon atmosphere at a deposition rate of 100 nm/min. Films 400 and 800 nm thick were prepared. The films were annealed under a 15% hydrogen forming gas (reducing) at 425°C for 35 min.

scholarly journals Thin Films: Resolving Bulk and Grain Boundary Transport Properties of TiO2 Thin Films Enabled by Laser-Induced Anisotropic Morphology (Adv. Mater. 29/2011)

2011 ◽  
Vol 23 (29) ◽  
pp. 3223-3223
Author(s):  
Guy Ankonina ◽  
Ui-Jin Chung ◽  
Adrian M. Chitu ◽  
Yigal Komem ◽  
Avner Rothschild
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Transport Properties ◽  
Tio2 Thin Films ◽  
Anisotropic Morphology ◽  
Grain Boundary Transport

The Influence of H2O on Iron Oxidation at 600°C: A Microstructural Study

2008 ◽  
Vol 595-598 ◽  
pp. 1005-1012 ◽  
Author(s):  
Torbjorn Jonsson ◽  
B. Pujilaksono ◽  
A. Fuchs ◽  
Jan Erik Svensson ◽  
Lars Gunnar Johansson ◽  
...  
Keyword(s):  
Growth Rate ◽  
Grain Boundary ◽  
Water Vapour ◽  
Growth Rates ◽  
Iron Oxidation ◽  
Metal Interface ◽  
Microstructural Study ◽  
Magnetite Layer ◽  
Grain Boundary Transport ◽  
Iron Forms

The oxidation of iron in dry O2 and in wet O2 (40% H2O) has been studied at 600°C. The oxide microstructure was investigated by SEM/EDX, FIB and XRD. Iron forms a layered scale in dry and wet oxygen at 600°C. The scale consists of a top hematite layer, a middle magnetite layer and a wüstite layer close to the scale metal interface. All three layers grow with time, but with different growth rates, the overall growth being approximately parabolic. The presence of water vapour increases the rate of oxidation and affects the evolution of the oxide microstructure. The higher rate of oxidation in the presence of water vapour is due to an increased growth rate of the magnetite layer and, especially, of the hematite layer, while the growth of the wüstite layer is not affected. It is suggested that water vapour influences grain boundary transport in the hematite layer.

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