INFLUENCE OF SUBSTRATE MATERIALS ON THE STRUCTURAL PROPERTIES OF ZNO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2015 ◽  
Vol 76 (9) ◽  
Author(s):  
S. Ahmad ◽  
N. D. Md Sin ◽  
Liyana Roslan ◽  
Hazriel Faizal Pahroraji ◽  
S. K. Alias ◽  
...  
Keyword(s):  
Grain Size ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Rf Power ◽  
Si Substrate ◽  
Sensor Applications ◽  
Average Grain Size ◽  
Influence Of Substrate

ZnO films were deposited on glass and SiO2/Si substrate by RF magnetron sputtering technique using high purity ZnO target at various RF power. The structural properties of ZnO thin film deposited on glass and SiO2/Si substrate were studied. The structural properties of the films were carried out by the surface profiler and field emission scanning electron microscope (FESEM). It was found that the average grain size of ZnO increases with increasing RF power and ZnO deposited on SiO2/Si substrate with RF power between 50-150 Watt gave the lower average grain size which is desired for the gas sensor applications. 

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Influence Of Substrate

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

The Effect of Target to Substrate Distance on the Properties of HAZO Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 685 ◽  
pp. 134-140 ◽  
Author(s):  
Wei Ming Lu ◽  
Jun Zhang ◽  
Hong Wei Diao ◽  
Lei Zhao ◽  
Wen Jing Wang
Keyword(s):  
Residual Stress ◽  
Grain Size ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Systematic Study ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Substrate Distance ◽  
Doped Zno

Hydrogen doped AZO films (HAZO) were prepared by RF magnetron sputtering. A systematic study of the effect of substrate to target distance (Dst) on the structural, electrical and optical properties of the as-grown HAZO films was carried out. Compared with the Al-doped ZnO films, the hydrogen in the atmosphere influenced the growth of the films by incorporating in the films and bombarding the surface of the film, namely, the Dst, which induced the residual stress and the roughness of the films decreasedwith an increase of the Dst. The films showed a smaller grain size. The surfacework function of the films changed with the composition of the films, reaching a maximum at 7.5cm.

THE INFLUENCE OF SUBSTRATE TEMPERATURE ON THE ELECTRICAL PROPERTIES OF ZnO FILMS PREPARED BY THE RF MAGNETRON SPUTTERING TECHNIQUE

NANO ◽  
2008 ◽  
Vol 03 (06) ◽  
pp. 469-476 ◽  
Author(s):  
K. SARAVANAKUMAR ◽  
V. SENTHILKUMAR ◽  
C. SANJEEVIRAJA ◽  
M. JAYACHANDRAN ◽  
V. GANESAN ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Uv Light ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Light Illumination ◽  
Influence Of Substrate ◽  
Substrate Temperatures

ZnO thin films were grown by the RF magnetron sputtering technique at different substrate temperatures, from RT to 300°C. The crystallite size was calculated from XRD and the grain size was measured from AFM for different substrate temperatures. The influence of the substrate temperature on the electrical properties of the films was investigated through the Hall effect, and conductivity studies were performed under UV light illumination. The conductivity and the carrier mobility of the films were found to increase with increasing substrate temperature, which can be due to the grain-boundary-dominated conduction mechanism. The thermal activation energy and photosensitivity of the films were calculated, and the results are presented in this paper.

Enhancement of the Quality of the ZnO Thin Films by Optimizing the Process Parameters of High-Temperature RF Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 581-584
Author(s):  
Chong Mu Lee ◽  
Choong Mo Kim ◽  
Sook Joo Kim ◽  
Yun Kyu Park
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Chamber Pressure ◽  
Zno Films ◽  
Band Edge Emission ◽  
Rf Power ◽  
Zno Film

ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results confirm us that RF magnetron sputtering offers ZnO films with a lower density of crystallographic defects. ZnO films with a high quality can be obtained by optimizing the substrate temperature, RF power, and pressure of the RF magnetron sputtering process.

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