THE INFLUENCE OF SUBSTRATE TEMPERATURE ON THE ELECTRICAL PROPERTIES OF ZnO FILMS PREPARED BY THE RF MAGNETRON SPUTTERING TECHNIQUE

NANO ◽  
2008 ◽  
Vol 03 (06) ◽  
pp. 469-476 ◽  
Author(s):  
K. SARAVANAKUMAR ◽  
V. SENTHILKUMAR ◽  
C. SANJEEVIRAJA ◽  
M. JAYACHANDRAN ◽  
V. GANESAN ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Uv Light ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Light Illumination ◽  
Influence Of Substrate ◽  
Substrate Temperatures

ZnO thin films were grown by the RF magnetron sputtering technique at different substrate temperatures, from RT to 300°C. The crystallite size was calculated from XRD and the grain size was measured from AFM for different substrate temperatures. The influence of the substrate temperature on the electrical properties of the films was investigated through the Hall effect, and conductivity studies were performed under UV light illumination. The conductivity and the carrier mobility of the films were found to increase with increasing substrate temperature, which can be due to the grain-boundary-dominated conduction mechanism. The thermal activation energy and photosensitivity of the films were calculated, and the results are presented in this paper.

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Influence Of Substrate

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Indium Doped ZnO Films Prepared by RF Magnetron Sputtering: Effect of Substrate Temperature on the Strain-Induced Band Gap

2012 ◽  
Vol 12 (3) ◽  
pp. 2503-2508 ◽  
Author(s):  
Georgi P. Daniel ◽  
David Devraj Kumar ◽  
V. B. Justinvictor ◽  
Prabitha B. Nair ◽  
K. Joy ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

2015 ◽  
Vol 7 (8) ◽  
pp. 1640-1648 ◽  
Author(s):  
P. Kondaiah ◽  
V. Madhavi ◽  
M. Chandra Sekhar ◽  
G. Mohan Rao ◽  
S. Uthanna
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Gate Dielectrics ◽  
Rf Magnetron Sputtering ◽  
Influence Of Substrate ◽  
Mos Gate

Influence of Substrate Temperature on the Structural, Electrical and Optical Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2011 ◽  
Vol 287-290 ◽  
pp. 2308-2313 ◽  
Author(s):  
Yi Hua Sun ◽  
Chen Hui Li ◽  
Wei Hao Xiong ◽  
Cai Hua Huang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Optical Transmission ◽  
Visible Range ◽  
Zno Films ◽  
Soda Lime Glass ◽  
Deposition Condition ◽  
Electrical And Optical Properties ◽  
Substrate Temperatures

Transparent conducting aluminum-doped zinc oxide (AZO) films have been prepared on soda-lime glass substrates by radio frequency magnetron sputtering using a high density ceramic target at different substrate temperatures. The structural, morphology, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, scanning electron microscope, Hall measurement, and optical transmission spectroscopy, and which were strongly influenced by substrate temperatures. Films with better texture, higher transmission, lower resistivity and larger carrier concentration were obtained for the samples fabricated at higher substrate temperature. The AZO film with the lowest resistivity of 4.63×10−4 Ω.cm and an average optical transmission of 92% in the visible range was deposited on the substrate heated at 450 °C. The optical bandgap depends on the deposition condition, and was in the range of 3.35~3.59 eV.

Influence of Sputtering Power and Substrate Temperature on Properties of Al2O3-Doped ZnO Films

2012 ◽  
Vol 557-559 ◽  
pp. 1945-1949
Author(s):  
Ge Yu ◽  
Ya Liu ◽  
Dan Hong Hong ◽  
Dong Lin Li ◽  
Jian Xin Zang
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Atomic Force ◽  
Argon Flow ◽  
Sputtering Power ◽  
Diffraction Peaks ◽  
Substrate Temperatures

Aluminum oxide-doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering at various substrate temperatures and sputtering powers with pure argon flow. Their electrical and optical properties and microstructures were investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), ultraviolet-visible spectrophotometer, four-probe tester. The investigation indicates that the electrical and optical properties and microstructures of the AZO films are remarkably influenced by substrate temperature and sputtering power. With the sputtering power increasing from 60W to 180W, the diffraction peaks rise significantly, the resistivity decreases quickly and the visible transmission is all quite high. When the substrate temperature increases from 25°C to 400°C, the diffraction peaks rise first and lower then both quickly, the resistivity decreases first sharply and then very slowly, and the visible transmission is also high. The films deposited at the substrate temperature 300°C with the sputtering power 180W have low resistivity 1.2×10–3 Ω•cm and high transmittance 92% at the same time.

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