Thermometry and Thermal Transport in Micro/Nanoscale Solid-State Devices and Structures

2001 ◽  
Vol 124 (2) ◽  
pp. 223-241 ◽  
Author(s):  
David G. Cahill ◽  
Kenneth Goodson ◽  
Arunava Majumdar

We review recent advances in experimental methods for high spatial-resolution and high time-resolution thermometry, and the application of these and related methods for measurements of thermal transport in low-dimensional structures. Scanning thermal microscopy (SThM) achieves lateral resolutions of 50 nm and a measurement bandwidth of 100 kHz; SThM has been used to characterize differences in energy dissipation in single-wall and multi-wall carbon nanotubes. Picosecond thermoreflectance enables ultrahigh time-resolution in thermal diffusion experiments and characterization of heat flow across interfaces between materials; the thermal conductance G of interfaces between dissimilar materials spans a relatively small range, 20<G<200 MW m−2K−1 near room temperature. Scanning thermoreflectance microscopy provides nanosecond time resolution and submicron lateral resolution needed for studies of heat transfer in microelectronic, optoelectronic and micromechanical systems. A fully-micromachined solid immersion lens has been demonstrated and achieves thermal-radiation imaging with lateral resolution at far below the diffraction limit, <2 μm. Microfabricated metal bridges using electrical resistance thermometry and joule heating give precise data for thermal conductivity of single crystal films, multilayer thin films, epitaxial superlattices, polycrystalline films, and interlayer dielectrics. The room temperature thermal conductivity of single crystal films of Si is strongly reduced for layer thickness below 100 nm. The through-thickness thermal conductivity of Si-Ge and GaAs-AlAs superlattices has recently been shown to be smaller than the conductivity of the corresponding alloy. The 3ω method has been recently extended to measurements of anisotropic conduction in polyimide and superlattices. Data for carbon nanotubes measured using micromachined and suspended heaters and thermometers indicate a conductivity near room temperature greater than diamond.

1983 ◽  
Vol 25 ◽  
Author(s):  
J. C. Hensel ◽  
R. T. Tung ◽  
J. M. Poate ◽  
F. C. Unterwald ◽  
D. C. Jacobson

ABSTRACTTransport studies have been performed on thin films of CoSi 2 and NiSis2 in the temperature range 1 to 300 K. The conductivities are metallic with essentially the same temperature dependence; however, the residual resistivities are markedly different even though the two silicides are structurally similar (the room temperature resistivity of NiSi2 being at least twice that of CoSi2 of 15 μΩ cm). The difference is attributed to intrinsic defects in NiSi2. This defect has been simulated by ion bombardment of the film where it is also shown that Matthiesen's rule is obeyed over a remarkable range of bombardment doses.


2018 ◽  
Vol 185 ◽  
pp. 03015
Author(s):  
Nataliya Repina

In single crystal films of the Fe0,5Co0,5 alloys grown by the method of vacuum condensation, a metastable condition may be received that is similar to the completely disordering condition. Approximately during ten days after the condensation in the film at the room temperature the short range and then long range atomic ordering is developed. Simultaneously the changes of magnetic anisotropy, electroresistance and coercive force of the films were investigated. This investigations show that the appearance of the shot range atomic ordering increases the electroresistance of films and the long range atomic ordering reduces it. The dependence of coercive force from time to time at room temperature atomic ordering films Fe0,5Co0,5 alloys, and Fe0,75Co0,25. Found that the biggest change Hc (double) is observed in single-crystal films when changing mechanism of magnetization reverse. Most is a consequence of the changes to the crystallographic anisotropy.


Author(s):  
L. E. Murr ◽  
G. Wong

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.


2001 ◽  
Vol 27 (6) ◽  
pp. 451-453 ◽  
Author(s):  
S. S. Kucherenko ◽  
V. P. Pashchenko ◽  
P. I. Polyakov ◽  
S. I. Khartsev ◽  
V. A. Shtaba

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