Transport Studies in Single-Crystal Films of Cosi2 and Nisi2

1983 ◽  
Vol 25 ◽  
Author(s):  
J. C. Hensel ◽  
R. T. Tung ◽  
J. M. Poate ◽  
F. C. Unterwald ◽  
D. C. Jacobson
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Transport Studies ◽  
Single Crystal Films ◽  
Crystal Films ◽  
The Difference ◽  
Temperature Resistivity

ABSTRACTTransport studies have been performed on thin films of CoSi 2 and NiSis2 in the temperature range 1 to 300 K. The conductivities are metallic with essentially the same temperature dependence; however, the residual resistivities are markedly different even though the two silicides are structurally similar (the room temperature resistivity of NiSi2 being at least twice that of CoSi2 of 15 μΩ cm). The difference is attributed to intrinsic defects in NiSi2. This defect has been simulated by ion bombardment of the film where it is also shown that Matthiesen's rule is obeyed over a remarkable range of bombardment doses.

Epitaxial growth of Cu-Ni Single Crystal Alloys and Multilayers by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Substrate Material ◽  
High Reactivity ◽  
Lattice Match ◽  
Single Crystal Films ◽  
Crystal Films

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.

scholarly journals Temperature Dependence of the Saturation Magnetic Flux Density for Fe16N2 Single-Crystal Films.

1995 ◽  
Vol 19 (2) ◽  
pp. 353-356 ◽  
Author(s):  
H. Takahashi ◽  
M. Komuro ◽  
K. Mitsuoka ◽  
Y. Sugita ◽  
T. Kobayashi ◽  
...  
Keyword(s):  
Magnetic Flux ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Flux Density ◽  
Magnetic Flux Density ◽  
Single Crystal Films ◽  
Crystal Films

scholarly journals Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films

IUCrJ ◽  
2020 ◽  
Vol 7 (1) ◽  
pp. 49-57 ◽  
Author(s):  
Nan Wang ◽  
Yu-Xiang Dai ◽  
Tian-Lin Wang ◽  
Hua-Zhe Yang ◽  
Yang Qi
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Single Crystal ◽  
Growth Characteristics ◽  
Metallic Surface ◽  
Zone Model ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Zone Ii

The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the effect of the thickness and surface roughness on the transport properties was investigated, especially for Bi thin films in Zone II. A two-transport channels model was adopted to reveal the influence of the film thickness on the competition between the metallic surface states and the semiconducting bulk states, which is consistent with the results of Bi single-crystal films. Therefore, the polycrystalline Bi thin films are expected to replace the single-crystal films in the application of spintronic devices.

scholarly journals Atomic ordering and coercive force of nanocrystalline Fe-Co alloy films

2018 ◽  
Vol 185 ◽  
pp. 03015
Author(s):  
Nataliya Repina
Keyword(s):  
Coercive Force ◽  
Single Crystal ◽  
Long Range ◽  
Room Temperature ◽  
Atomic Ordering ◽  
Crystallographic Anisotropy ◽  
Single Crystal Films ◽  
Metastable Condition ◽  
Crystal Films ◽  
Vacuum Condensation

In single crystal films of the Fe0,5Co0,5 alloys grown by the method of vacuum condensation, a metastable condition may be received that is similar to the completely disordering condition. Approximately during ten days after the condensation in the film at the room temperature the short range and then long range atomic ordering is developed. Simultaneously the changes of magnetic anisotropy, electroresistance and coercive force of the films were investigated. This investigations show that the appearance of the shot range atomic ordering increases the electroresistance of films and the long range atomic ordering reduces it. The dependence of coercive force from time to time at room temperature atomic ordering films Fe0,5Co0,5 alloys, and Fe0,75Co0,25. Found that the biggest change Hc (double) is observed in single-crystal films when changing mechanism of magnetization reverse. Most is a consequence of the changes to the crystallographic anisotropy.

Single Crystal Growth and Thermoelectric Properties of Ce5Cu19P12

1998 ◽  
Vol 545 ◽  
Author(s):  
K. J. Proctor ◽  
F. J. DiSalvo
Keyword(s):  
Electrical Resistivity ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Single Crystal Growth ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Resistivity

AbstractSingle crystals of the known ternary cerium intermetallic Ce5Cu19P12were grown by Sn flux and I2transport methods. The long axis of the black hexagonal needles was confirmed to be the c-axis by single crystal X-ray diffraction. Electrical resistivity of both single crystals and a pressed pellet was measured from 4 - 300 K; the room temperature resistivity is about 400 μΩ-cm for the needle axis of the crystals and about 5 mΩ-cm for the pressed pellet. The thermopower of the pressed pellet was found to be 34 μV/K at room temperature.

Uniform growth of SiC single crystal thin films via a metal–Si alloy flux by vapour–liquid–solid pulsed laser deposition: the possible existence of a precursor liquid flux film

CrystEngComm ◽  
2016 ◽  
Vol 18 (1) ◽  
pp. 143-148 ◽  
Author(s):  
Aomi Onuma ◽  
Shingo Maruyama ◽  
Takeshi Mitani ◽  
Tomohisa Kato ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Liquid Flux ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Interfacial Behaviour

3C-SiC single crystal films were successfully obtained in the PLD-based VLS process with a Si–Ni liquid flux, the interfacial behaviour of which was investigated by in situ high temperature laser microscopy in vacuum.

Thermometry and Thermal Transport in Micro/Nanoscale Solid-State Devices and Structures

2001 ◽  
Vol 124 (2) ◽  
pp. 223-241 ◽  
Author(s):  
David G. Cahill ◽  
Kenneth Goodson ◽  
Arunava Majumdar
Keyword(s):  
Thermal Conductivity ◽  
Carbon Nanotubes ◽  
Single Crystal ◽  
Time Resolution ◽  
Thermal Transport ◽  
Room Temperature ◽  
Lateral Resolution ◽  
Small Range ◽  
Single Crystal Films ◽  
Crystal Films

We review recent advances in experimental methods for high spatial-resolution and high time-resolution thermometry, and the application of these and related methods for measurements of thermal transport in low-dimensional structures. Scanning thermal microscopy (SThM) achieves lateral resolutions of 50 nm and a measurement bandwidth of 100 kHz; SThM has been used to characterize differences in energy dissipation in single-wall and multi-wall carbon nanotubes. Picosecond thermoreflectance enables ultrahigh time-resolution in thermal diffusion experiments and characterization of heat flow across interfaces between materials; the thermal conductance G of interfaces between dissimilar materials spans a relatively small range, 20<G<200 MW m−2K−1 near room temperature. Scanning thermoreflectance microscopy provides nanosecond time resolution and submicron lateral resolution needed for studies of heat transfer in microelectronic, optoelectronic and micromechanical systems. A fully-micromachined solid immersion lens has been demonstrated and achieves thermal-radiation imaging with lateral resolution at far below the diffraction limit, <2 μm. Microfabricated metal bridges using electrical resistance thermometry and joule heating give precise data for thermal conductivity of single crystal films, multilayer thin films, epitaxial superlattices, polycrystalline films, and interlayer dielectrics. The room temperature thermal conductivity of single crystal films of Si is strongly reduced for layer thickness below 100 nm. The through-thickness thermal conductivity of Si-Ge and GaAs-AlAs superlattices has recently been shown to be smaller than the conductivity of the corresponding alloy. The 3ω method has been recently extended to measurements of anisotropic conduction in polyimide and superlattices. Data for carbon nanotubes measured using micromachined and suspended heaters and thermometers indicate a conductivity near room temperature greater than diamond.

'The Role of the Grain Boundary on the Resistivity of Pb(Fe1/2Nb1/2)O3 at Room Temperature

2002 ◽  
Vol 718 ◽  
Author(s):  
Sang-Bop Lee ◽  
Kwang-Ho Lee ◽  
Hwan Kim
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Sintered Specimen ◽  
Room Temperature Resistivity ◽  
Boundary Properties ◽  
Order Of Magnitude ◽  
The Difference ◽  
Fe Reduction ◽  
Temperature Resistivity

AbstractThe effect of changing sintering temperature on the grain boundary properties and the room temperature resistivity (ρRT) of Pb(Fe1/2Nb1/2)O3 (PFN) was investigated. Monitering the temperature dependence of resistivity showed that the ρRT's of 1050°C and 1150°C-sintered specimen were 1011ΩEcm and 104ΩEcm respectively, but the resistivity above 300°C became nearly identical. The previous model, that the low resistivity of PFN is due to the electron hopping between Fe2+ and Fe3+ driven by the reduction of PFN, couldn't explain this phenomenon, and the reconsideration of the Fe reduction revealed that the difference of electron concentration between the 1050°C and 1150°C-sintered specimen couldn't exceed one order of magnitude. The role of the grain boundary was introduced in order to account for this phenomenon.

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