Moving Front Fixing in Thin Film Laser Annealing

1992 ◽  
Vol 114 (1) ◽  
pp. 271-277 ◽  
Author(s):  
C. P. Grigoropoulos ◽  
W. E. Dutcher
Keyword(s):  
Thin Film ◽  
Laser Annealing ◽  
Radiative Properties ◽  
Semiconductor Layer ◽  
Translation Speed ◽  
Curvilinear Grids ◽  
Amorphous Substrates ◽  
Optimal Material ◽  
Induced Crystallization ◽  
Moving Front

The process of laser melting and recrystallization of thin silicon films, which are deposited on amorphous substrates, is capable of improving the semiconductor electrical and crystalline properties. The process is controlled by the intensity of the laser beam, the material translation speed, and the thermal and radiative properties of the semiconductor layer and the encapsulating structure. Accurate theoretical modeling of the associated phase change process is essential for optimal material processing. This paper presents a numerical model implementing a front-fixing approach and body-fitted curvilinear grids to analyze the heat transfer and the induced crystallization rates in thin film laser annealing. The results are compared to experimental data and reasonable agreement is obtained. Further improvements depend upon knowledge of thin film thermal and optical properties.

Laser-Induced Crystallization of Silicon on Bulk Amorphous Substrates: An Overview

1982 ◽  
Vol 13 ◽  
Author(s):  
D. K. Biegelsen ◽  
N. M. Johnson ◽  
W. G. Hawkins ◽  
L. E. Fennell ◽  
M. D. Moyer
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
Epitaxial Growth ◽  
Current Understanding ◽  
Radiant Heating ◽  
Silicon Thin Film ◽  
Device Characterization ◽  
Electrical Device ◽  
Amorphous Substrates ◽  
Induced Crystallization

ABSTRACTIn this paper we review the current understanding of laser-induced silicon thin film crystal growth on bulk amorphous substrates. We propose a model for oriented nucleation and show that the silicon reflectivity jump on melting coupled with radiant heating lead naturally to this autonucleation mechanism. We then survey various techniques for control of lateral epitaxial growth and conclude with the results of some recent electrical device characterization.

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser

YBa2Cu3OySuperconducting Thin Film Obtained by Laser Annealing

1988 ◽  
Vol 27 (Part 2, No. 2) ◽  
pp. L231-L233 ◽  
Author(s):  
Naoaki Aizaki ◽  
Koichi Terashima ◽  
Jun-ichi Fujita ◽  
Shinji Matsui
Keyword(s):  
Thin Film ◽  
Laser Annealing

Selective Laser Annealing Technology for LTPS Thin Film Transistors Fabrications

2019 ◽  
Author(s):  
T. Goto ◽  
K. Imokawa ◽  
T. Yamada ◽  
K. Saito ◽  
J. Gotoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Laser Annealing

Enhancement of On/Off Current Ratio of Poly-Silicon TFT by Selective Laser-Induced Crystallization of Active Layer

1997 ◽  
Vol 471 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Hong-Seok Choi ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
Active Layer ◽  
Laser Annealing ◽  
Wave Length ◽  
Excimer Laser Annealing ◽  
Current Ratio ◽  
Ito Film ◽  
Conduction Channel ◽  
Induced Crystallization

ABSTRACTWe have proposed the new poly-Si TFT which reduces the leakage current effectively by employing highly resistive a-Si region in the channel. The active layer of proposed device is crystallized selectively by employing excimer laser annealing while the both sides of channel near the source/drain are not recrystallized and remained as a-Si. Unlikely LDD or offset structure, the a-Si region which is designed to reduce the leakage current acts as the conduction channel of carriers under the ON state, so that the ON current is decreased very little. The selectively crystallized active layer can be fabricated by irradiating the excimer laser through ITO film of which transmittance at the wave length of laser is selectively adjusted. In the course of fabricating the proposed device, any additional photo masking step is not necessary and misalign problem is eliminated. The experimental results show that the ON/OFF current ratio of proposed poly-Si TFT is 106 while that of conventional one is 105.

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