Re-examining Electron-Fermi Relaxation in Gold Films With a Nonlinear Thermoreflectance Model

2011 ◽  
Vol 133 (4) ◽  
Author(s):  
Patrick E. Hopkins ◽  
Leslie M. Phinney ◽  
Justin R. Serrano
Keyword(s):  
Thin Film ◽  
Relaxation Time ◽  
Laser Pulse ◽  
Thermophysical Property ◽  
Electron Emission ◽  
Electron System ◽  
Gold Films ◽  
Pump Probe ◽  
Fs Laser ◽  
20 Nm

In this work, we examine Fermi relaxation in 20 nm Au films with pump-probe themoreflectance using a thin film, intraband thermoreflectance model. Our results indicate that the Fermi relaxation of a perturbed electron system occurs approximately 1.10±0.05 ps after absorption of a 785 nm, 185 fs laser pulse. This is in agreement with reported values from electron emission experiments but is higher than the Fermi relaxation time determined from previous thermoreflectance measurements. This discrepancy arises due to thermoreflectance modeling and elucidates the importance of the use of a proper thermoreflectance model for thermophysical property determination in pump-probe experiments.

scholarly journals Revisiting neutron yield in table-top nuclear fusion driven by an intense femtosecond laser pulse interaction with the gas clusters

2021 ◽  
Vol 35 (22) ◽  
Author(s):  
Guanglong Chen ◽  
Yunjiu Cao ◽  
Li Ren ◽  
Jiehui Huang ◽  
Jianping He
Keyword(s):  
Laser Pulse ◽  
Neutron Yield ◽  
Laser Energy ◽  
Nuclear Fusion ◽  
Average Radius ◽  
Cluster Radius ◽  
Pure Coulomb ◽  
Fs Laser ◽  
Gas Clusters ◽  
20 Nm

With the development of femtosecond (fs) laser technology, an fs laser pulse with 10s of Joule, even 100s of Joule energy is available and the focused laser intensity can be expected to induce the pure Coulomb explosion of the cluster with a much larger average radius than before. Meanwhile, the production of gas cluster with an average radius of upto 10s of nanometer has been possible. In this case, it is necessary to reinvestigate the feasibility of 109 n/shot neutron yield for the practical application in the intense fs laser-driven nuclear fusion. In this work, the neutron yield from the explosions of the D2 clusters of 6–20 nm average radius at the 0.5–100 J pulse energy and the CD4 clusters was investigated theoretically. It is found that the optimum neutron yield of 109 n/shot can be obtained at the laser energy and the cluster radius currently available. However, a clustered-gas jet with a large cross-section is demanded to match the proper plasma diameter.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

THERMAL AND MECHANICAL RESPONSES OF GOLD FILMS DURING NANOSECOND LASER-PULSE HEATING

1994 ◽  
Vol 7 (3) ◽  
pp. 175-188 ◽  
Author(s):  
Taiqing Qiu ◽  
Chang-Lin Tien ◽  
Mark A. Shannon ◽  
Richard E. Russo
Keyword(s):  
Laser Pulse ◽  
Pulse Heating ◽  
Nanosecond Laser Pulse ◽  
Nanosecond Laser ◽  
Gold Films ◽  
Mechanical Responses ◽  
Laser Pulse Heating

scholarly journals Photochemical production of gold films on the surface of fabric materials

2020 ◽  
Vol 22 (4) ◽  
pp. 28-30
Author(s):  
Perizat Abdurazova ◽  
Malik Sataev ◽  
Gulmira Kenzhibayeva ◽  
Shayzada Koshkarbayeva ◽  
Kalamkas Amanbayeva ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solutions ◽  
Gold Films ◽  
Gold Chloride ◽  
Special Equipment ◽  
Photochemical Processes ◽  
Sorption Layer ◽  
Fabric Materials ◽  
By Products ◽  
Semiconductor Properties

AbstractA technology for producing gold films on the surface of fabric materials has been developed, which provides for preliminary wetting of the fabric product with aqueous solutions of gold (III) chloride. In this case, a sorption layer of gold chloride is formed on the surface of fabric materials. Then, when drying these products under sunlight, physicochemical and photochemical processes occur, leading initially to the formation of monovalent gold chlorides, which, having semiconductor properties, provide the release of elemental gold. After washing of by-products on the surface of the material remains an ultra-thin film of gold, which has a sufficiently strong grip on the base. Since the proposed technology does not require special equipment it can be used to apply functional films of gold on various products of technical, household and medical purposes.

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