scholarly journals Detection of Unburned Hydrocarbons (UHC) in an Atmospheric Pressure Combustor With Premixing and Prevaporization Using a Tuneable Excimer Laser

1996 ◽  
Author(s):  
Rudolf Lachner ◽  
Daniel Theisen ◽  
Hans Kettl ◽  
Rainer Fink ◽  
Dieter Rist ◽  
...  
Keyword(s):  
Combustion Chamber ◽  
Excimer Laser ◽  
Atmospheric Pressure ◽  
Imaging Technique ◽  
Gaseous Fuel ◽  
Symmetry Line ◽  
Krf Laser ◽  
Unburned Hydrocarbons ◽  
193 Nm ◽  
Combustion Processes

Gaseous unburned hydrocarbons (UHC) are investigated in an atmospheric pressure combustor with premixing and prevaporization. The rectangular combustion chamber is equipped with silica quartz windows allowing laser-based investigations in the UV regime. A new double shell concept is employed to atomize the fuel (n-heptane) and to stabilize the flame. For the detection of UHC, a tuneable ArF (λ ≈ 193 nm) or KrF (λ ≈ 248 nm) excimer laser is used. The results show that this imaging technique is feasible in an atmospheric pressure, liquid fuelled combustor. Liquid and gaseous fuel is detected inside the vortices induced by the double shell, where the main combustion processes occur. Furthermore, droplets and UHC can be found along the symmetry line of the double shell. Comparing the two approaches used for the visualization of UHC, it turns out that the application of a KrF laser seems to be more suitable.

Efficient Photochemical Conversion of N2O into N2and O2by 193-nm-ArF-excimer Laser in N2or Air at Atmospheric Pressure

2005 ◽  
Vol 34 (6) ◽  
pp. 812-813 ◽  
Author(s):  
Masaharu Tsuji ◽  
Hiroshi Sako ◽  
Kenji Noda ◽  
Makoto Senda ◽  
Taro Hamagami ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Atmospheric Pressure ◽  
Photochemical Conversion ◽  
Arf Excimer Laser ◽  
193 Nm

Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

1988 ◽  
Vol 45 (4) ◽  
pp. 361-364 ◽  
Author(s):  
F. Foulon ◽  
E. Fogarassy ◽  
A. Slaoui ◽  
C. Fuchs ◽  
S. Unamuno ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Melting Threshold ◽  
193 Nm

Fabrication of silicone microcups on periodic microswelling structure of silicone rubber by 193-nm ArF excimer laser

2021 ◽  
pp. 131335
Author(s):  
Masayuki Okoshi ◽  
Kaede Iwasaki ◽  
Tsuyoshi Yoshida
Keyword(s):  
Excimer Laser ◽  
Silicone Rubber ◽  
Arf Excimer Laser ◽  
193 Nm

Excimer Laser (193 nm) Myopic Keratomileusis in Sighted and Blind Human Eyes

1990 ◽  
Vol 6 (3) ◽  
pp. 165-173 ◽  
Author(s):  
Theo Seiler ◽  
Gunter Kahle ◽  
Martin Kriegerowski
Keyword(s):  
Excimer Laser ◽  
193 Nm ◽  
Human Eyes

scholarly journals 193-nm deep-UV lithography system using a line-narrowed ArF excimer laser

1993 ◽  
Author(s):  
Bruce W. Smith ◽  
Malcolm C. Gower ◽  
Mark Westcott ◽  
Lynn F. Fuller
Keyword(s):  
Excimer Laser ◽  
Uv Lithography ◽  
Arf Excimer Laser ◽  
Deep Uv ◽  
193 Nm ◽  
Lithography System

Holographic Pattern Etching of Silicon—Carbide by Excimer Laser

1989 ◽  
Vol 158 ◽  
Author(s):  
M. Murahara ◽  
M. Yonekawa ◽  
K. Shirakawa
Keyword(s):  
Laser Beam ◽  
Present Method ◽  
Etching Rate ◽  
The Other ◽  
Laser Beams ◽  
Excimer Lasers ◽  
Holographic Method ◽  
Etching Depth ◽  
Krf Laser ◽  
193 Nm

ABSTRACTThe diffraction grating on SiC mirror was performed by a laser holographic method. In the present method, KrF laser and CIF3 was used for etchant gas. The ClF3 gas has an absorption band in the range between 200 and 400 nm. Therefore, CIF3 gas is effectively decomposed by the XeF, KrF and ArF excimer lasers' radiation. It is found that absorption of Si—C is about 50% in the range of between200 and 400 nm, and that the bonding energy of Si—C is lower than the photon energy of KrF laser beam. The above results indicate the direct decomposition of Si—Cbond. On the other hand, the threshold fluence energy for etching was 800 mJ/cm2 in 249 nm and in 193 nm as high as 7 J/cm2. In these results, the KrF laser is more effective than ArF laser. Then we applied KrF laser to crystalline SiC in an atmosphere of C1F3 gas. The divided two polarized KrF laser beams were interfered on the substrate. And the beams were used to photodissociated CIF3 gas in the proximity of substrate. Fluence of KrF laser beam was 1 J/cm2. The incidential angle of KrF laser beams was 20º and the grating gaps were 7170 Å, etching depth 1000 Å, and etching rate was 5 Å/pulse.

Preliminary study of argon fluoride (193 nm) excimer laser trabeculectomy Scanning electron microscopy at five months

1990 ◽  
Vol 16 (5) ◽  
pp. 617-620 ◽  
Author(s):  
D. Aron-Rosa ◽  
A. Maden ◽  
S. Ganem ◽  
B. Aron ◽  
M. Gross
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Excimer Laser ◽  
Preliminary Study ◽  
193 Nm ◽  
Argon Fluoride ◽  
Scanning Electron

Laser Surgical Treatment of Glaucoma by Excimer Laser with 193 nm Wavelength

2007 ◽  
pp. 130-130
Author(s):  
Khristo Takhchidi ◽  
Nikolai Ereskin
Keyword(s):  
Surgical Treatment ◽  
Excimer Laser ◽  
193 Nm
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