Scanning Thermal Microscopy of Carbon Nanotubes

2000 ◽  
Author(s):  
Li Shi ◽  
Sergei Plyasunov ◽  
Adrian Bachtold ◽  
Paul L. McEuen ◽  
Arunava Majumdar

Abstract This paper reports the use of scanning thermal microscopy (SThM) for studying heat dissipation and phonon transport in nanoelectronic circuits consisting of carbon nanotubes (CNs). Thermally designed and batch fabricated SThM probes were used to resolve the phonon temperature distribution in the CN circuits with a spatial resolution of 50 nm. Heat dissipation at poor metal-CN contacts could be readily found by the thermal imaging technique. Important questions regarding energy transport in nanoelectronic circuits, such as where is heat dissipated, whether the electrons and phonons are in equilibrium, how phonons are transported, and what are the effects of mechanical deformation on the transport and dissipation properties, are addressed in this work.

2021 ◽  
Vol 127 (3) ◽  
Author(s):  
G. Stefanou ◽  
F. Menges ◽  
B. Boehm ◽  
K. A. Moran ◽  
J. Adams ◽  
...  

2001 ◽  
Author(s):  
Kwong-Luck Tan ◽  
Andrew Miner ◽  
Xiaofeng Fan ◽  
Chris LaBounty ◽  
Gehong Zheng ◽  
...  

Abstract Ever increasing importance of cooling and precise temperature control in microelectronics and optoelectronics has driven recent development of integrated thermoelectric and thermionic cooling structures. Previous studies have investigated SiGe/Si superlattice thermionic coolers experimentally using thermocouples that were 50 μm in diameter. However, the relative size of these thermocouples as compared to the devices sizes (30–100 μm) makes surface and cross-section temperature measurement of the SiGe/Si superlattice thermionic coolers not possible. In this work, a sub 100 nm probe was used to measure the surface and cross-sectional temperature of the SiGe/Si superlattice thermionic coolers using scanning thermal microscopy. Two sets of superlattice thermionic coolers were used in this study and their cooling curves (temperature vs current) are presented. Each set consists of six devices of different sizes. A comparison of device cooling performance is examined. A mechanism for studying thermionic cooling in the superlattice coolers is discussed through an analysis of the cooler cross-section temperature profile.


2001 ◽  
Author(s):  
L. Shi ◽  
P. Kim ◽  
S. Plyasunov ◽  
A. Bachtold ◽  
P. L. McEuen ◽  
...  

Abstract The temperature distribution of current-carrying carbon nanotubes (CNs) have been measured by scanning thermal microscopy. The thermal imaging results support that multiwall (MW) CNs and semiconducting single wall (SW) CNs are diffusive and dissipative, while metallic SWCNs change from non dissipative at low electric fields to dissipative at high fields due to optical phonon emission. The temperature rise in a 4.5 μm long MWCN was of order 40 K for a power input of 22 μW and increased linearly with power input. There existed a large temperature drop at the tube-substrate interface due to a weak contact thermal conductance about 0.1 W/m-K. For the MWCN, comparable amount of Joule heat was lost from the tube bulk to the substrate and from the tube to the metal contacts.


Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 941-948 ◽  
Author(s):  
Susil Baral ◽  
Ali Rafiei Miandashti ◽  
Hugh H. Richardson

In this paper, we introduce a new optical temperature and thermal imaging technique combining near-field microscopy and Er3+ photoluminescence thermometry.


2000 ◽  
Vol 77 (26) ◽  
pp. 4295-4297 ◽  
Author(s):  
Li Shi ◽  
Sergei Plyasunov ◽  
Adrian Bachtold ◽  
Paul L. McEuen ◽  
Arunava Majumdar

2009 ◽  
Vol 5 (1) ◽  
pp. 31-35
Author(s):  
F.F. Sizov ◽  
◽  
V.V. Zabudsky ◽  
A.G. Golenkov ◽  
S.L. Kravchenko ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 491
Author(s):  
Christoph Metzke ◽  
Fabian Kühnel ◽  
Jonas Weber ◽  
Günther Benstetter

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.


Sign in / Sign up

Export Citation Format

Share Document