Microtensile Methodology for Mechanical Characterization of Thin Films

2001 ◽  
Author(s):  
Betty H. Yeung ◽  
Bill Lytle ◽  
Vijay Sarihan ◽  
David T. Read ◽  
Yifan Guo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Material Properties ◽  
Mechanical Characterization ◽  
Technology Development ◽  
Metal Films ◽  
Metallic Films ◽  
Information Base ◽  
Constitutive Properties

Abstract A microtensile methodology developed at the National Institute of Standards and Technology (NIST) has been adopted and applied at Motorola to evaluate material properties of thin films. This methodology is a significant part of the materials technology development at Motorola. Special specimens of thin metal films are designed and produced based on common microlithographic techniques and silicon processing methods. The experimentation is performed using the microtensile tester, which was developed for the accurate measurement of constitutive properties of thin metallic films. Through the application of the techniques presented here, valuable information and results have been achieved, which provide an extended information base for thin-film materials. Ultimately, such data are applied to processing and reliability predictions and the optimization of thin-film processes and materials.

Bragg-Brentano and Seeman-Bohlin Diffractometers for Thin Films

1988 ◽  
Vol 3 (1) ◽  
pp. 25-29 ◽  
Author(s):  
L. S. Zevin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Diffraction Data ◽  
Metallic Films ◽  
Tilting Angle

AbstractThe performances of Seeman-Bohlin (S-B) and Bragg-Brentano (B-B) diffractometers with flat thin film samples were compared on the basis of equal instrumental aberrations. It was found that the S-B arrangement has only a marginal advantage as regards diffracted intensity, and that both types of diffractometer may be successfully employed for characterization of thin films. Diffraction data obtained with very thin metallic films (down to 30 Å) are included for illustration. In order to eliminate reflections from the singlecrystal substrate in the B-B diffractometer, sample tilting was employed. Provided the tilting angle remains within 0.5°, sample tilting causes only moderate additional broadening of the thin film peaks.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

scholarly journals Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

2019 ◽  
Vol 26 (5) ◽  
pp. 1600-1611 ◽  
Author(s):  
Gihan Kwon ◽  
Yeong-Ho Cho ◽  
Ki-Bum Kim ◽  
Jonathan D. Emery ◽  
In Soo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Cell ◽  
Porous Electrode ◽  
High Energy ◽  
Porous Electrodes ◽  
X Ray ◽  
Pdf Analysis ◽  
Thin Film Catalysts

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

scholarly journals Open-source micro-tensile testers via additive manufacturing for the mechanical characterization of thin films and papers

PLoS ONE ◽  
2018 ◽  
Vol 13 (5) ◽  
pp. e0197999 ◽  
Author(s):  
Krishanu Nandy ◽  
David W. Collinson ◽  
Charlie M. Scheftic ◽  
L. Catherine Brinson
Keyword(s):  
Thin Films ◽  
Additive Manufacturing ◽  
Open Source ◽  
Mechanical Characterization ◽  
Tensile Testers
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