Bragg-Brentano and Seeman-Bohlin Diffractometers for Thin Films

AbstractThe performances of Seeman-Bohlin (S-B) and Bragg-Brentano (B-B) diffractometers with flat thin film samples were compared on the basis of equal instrumental aberrations. It was found that the S-B arrangement has only a marginal advantage as regards diffracted intensity, and that both types of diffractometer may be successfully employed for characterization of thin films. Diffraction data obtained with very thin metallic films (down to 30 Å) are included for illustration. In order to eliminate reflections from the singlecrystal substrate in the B-B diffractometer, sample tilting was employed. Provided the tilting angle remains within 0.5°, sample tilting causes only moderate additional broadening of the thin film peaks.

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Microtensile Methodology for Mechanical Characterization of Thin Films

10.1115/imece2001/epp-24708 ◽

2001 ◽

Author(s):

Betty H. Yeung ◽

Bill Lytle ◽

Vijay Sarihan ◽

David T. Read ◽

Yifan Guo

Keyword(s):

Thin Film ◽

Thin Films ◽

Material Properties ◽

Mechanical Characterization ◽

Technology Development ◽

Metal Films ◽

Metallic Films ◽

Information Base ◽

Constitutive Properties

Abstract A microtensile methodology developed at the National Institute of Standards and Technology (NIST) has been adopted and applied at Motorola to evaluate material properties of thin films. This methodology is a significant part of the materials technology development at Motorola. Special specimens of thin metal films are designed and produced based on common microlithographic techniques and silicon processing methods. The experimentation is performed using the microtensile tester, which was developed for the accurate measurement of constitutive properties of thin metallic films. Through the application of the techniques presented here, valuable information and results have been achieved, which provide an extended information base for thin-film materials. Ultimately, such data are applied to processing and reliability predictions and the optimization of thin-film processes and materials.

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The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.891 ◽

2011 ◽

Vol 239-242 ◽

pp. 891-894 ◽

Cited By ~ 3

Author(s):

Tsung Fu Chien ◽

Jen Hwan Tsai ◽

Kai Huang Chen ◽

Chien Min Cheng ◽

Chia Lin Wu

Keyword(s):

Thin Film ◽

Thin Films ◽

Sol Gel ◽

Morphological Characterization ◽

Experimental Result ◽

X Ray Diffraction ◽

Solution Deposition ◽

Capacitance Voltage ◽

Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

Journal of Synchrotron Radiation ◽

10.1107/s1600577519007240 ◽

2019 ◽

Vol 26 (5) ◽

pp. 1600-1611 ◽

Cited By ~ 3

Author(s):

Gihan Kwon ◽

Yeong-Ho Cho ◽

Ki-Bum Kim ◽

Jonathan D. Emery ◽

In Soo Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrochemical Cell ◽

Porous Electrode ◽

High Energy ◽

Porous Electrodes ◽

X Ray ◽

Pdf Analysis ◽

Thin Film Catalysts

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

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Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-655-cc3.5.1 ◽

2000 ◽

Vol 655 ◽

Cited By ~ 1

Author(s):

Masanori Okuyama ◽

Toshiyuki Nakaiso ◽

Minoru Noda

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Polarization Reversal ◽

Ambient Gas ◽

Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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Characterization of Lithium Borate and Lithium Silicate Thin-Films as Solid Electrolyte for Thin-Film Battery

Proceedings of the 14th Asian Conference on Solid State Ionics (ACSSI 2014)(1AGSSEA) ◽

10.3850/978-981-09-1137-9_166 ◽

2014 ◽

Author(s):

Haruka Itabashi ◽

Naoaki Kuwata ◽

Daichi Fujimoto ◽

Yasutaka Matsuda ◽

Junichi Kawamura

Keyword(s):

Thin Film ◽

Thin Films ◽

Solid Electrolyte ◽

Lithium Silicate ◽

Lithium Borate ◽

Thin Film Battery

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Surfactant-Mediated Epitaxial Growth of Metallic Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.117.55 ◽

2010 ◽

Vol 117 ◽

pp. 55-61

Author(s):

Masao Kamiko ◽

Ryoichi Yamamoto

Keyword(s):

Thin Film ◽

Thin Films ◽

Epitaxial Growth ◽

Film Growth ◽

Thin Film Growth ◽

Growth Mode ◽

Metallic Thin Films ◽

Layer By Layer ◽

Metallic Films ◽

Heteroepitaxial Growth

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

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Electrodeposition and Characterization of Manganese Dioxide Thin Films on Silicon Pillar Arrays for 3D Thin-Film Lithium-Ion Batteries

ECS Meeting Abstracts ◽

10.1149/ma2014-01/8/509 ◽

2014 ◽

Keyword(s):

Thin Film ◽

Thin Films ◽

Lithium Ion Batteries ◽

Manganese Dioxide ◽

Lithium Ion ◽

Pillar Arrays

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Optical Characterization of LaF3 by Variable Angle Purged UV Spectroscopic Ellipsometry

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.662.243 ◽

2013 ◽

Vol 662 ◽

pp. 243-248

Author(s):

Wen Yuan Deng

Keyword(s):

Thin Film ◽

Thin Films ◽

Substrate Temperature ◽

Optical Characterization ◽

Theory Model ◽

Material Dispersion ◽

Optical Index ◽

Variable Angle ◽

Selection Of

The optical characterization of LaF3 thin film in DUV spectral range was experimental investigated by using a variable angle purged UV spectroscopic ellipsometer. In order to take into account the inhomogeneity, a theory model that dividing the single thin film into several sublayers was adopted. Two kinds of LaF3 thin films fabricated on fused silicate substrate with different substrates temperature were tested. From the obtained optical index and the physical thickness of different sublayer in the two different kinds of LaF3 thin films, it was found that, the inhomogeneity of the LaF3 thin film deposited with substrate temperature at 300°C was stronger than that of the LaF3 thin film deposited with substrate temperature at 250°C, indicating that the substrate temperature has important influence on the optical index and inhomogeneity of LaF3 thin films. For both of the two kinds LaF3 thin films, the agreement between the measured transmittance and the simulated transmittance using the parameters from regression of SE was nice, indicating that the selection of the material dispersion law and regression procedure were successful.

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Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

MRS Proceedings ◽

10.1557/proc-520-57 ◽

1998 ◽

Vol 520 ◽

Cited By ~ 1

Author(s):

A. Maldonado ◽

D.R. Acosta ◽

M. De La Luz Olvera ◽

R. Castanedo ◽

G. Torres ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Zinc Oxide ◽

Spray Pyrolysis ◽

Doping Concentration ◽

Film Properties ◽

Preferential Growth ◽

X Ray ◽

Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

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