Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

2007 ◽  
Author(s):  
S. Basu ◽  
B. J. Lee ◽  
Z. M. Zhang
Keyword(s):  
Carrier Mobility ◽  
Room Temperature ◽  
Radiative Properties ◽  
Multilayer Thin Films ◽  
Mems Devices ◽  
Si Substrate ◽  
Model Predictions ◽  
Doped Silicon ◽  
Infrared Spectrometer ◽  
Heavily Doped

This paper describes an experimental investigation on the infrared radiative properties of heavily-doped silicon (Si) at room temperature. Lightly-doped Si wafers were ion implanted with boron and phosphorus atoms to doping concentrations of 1×1020 and 1×1021 cm−3. Rapid thermal annealing was performed to activate the implanted dopants. A Fourier-transform infrared spectrometer was employed to measure the normal transmittance as well as reflectance of the samples in the spectral region from 2 to 20 μm. Accurate carrier mobility and ionization models were identified after carefully reviewing the available literature, and then incorporated into Drude model to predict the dielectric function of doped Si. The radiative properties of doped Si samples were calculated by treating the doped region as multilayer thin films of different doping concentrations on a thick Si substrate. The measured spectral transmittance and reflectance agree well with the model predictions. The results obtained from this study will facilitate the future applications of heavily-doped Si in semiconductor as well as MEMS devices.

Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

2009 ◽  
Vol 132 (2) ◽  
Author(s):  
S. Basu ◽  
B. J. Lee ◽  
Z. M. Zhang
Keyword(s):  
Carrier Mobility ◽  
Room Temperature ◽  
Radiative Properties ◽  
Multilayer Thin Films ◽  
Si Substrate ◽  
Future Design ◽  
Model Predictions ◽  
Infrared Spectrometer ◽  
Heavily Doped ◽  
Selective Emitters

This paper describes an experimental investigation on the infrared radiative properties of heavily doped Si at room temperature. Lightly doped Si wafers were ion-implanted with either boron or phosphorus atoms, with dosages corresponding to as-implanted peak doping concentrations of 1020 and 1021 cm−3; the peak doping concentrations after annealing are 3.1×1019 and 2.8×1020 cm−3, respectively. Rapid thermal annealing was performed to activate the implanted dopants. A Fourier-transform infrared spectrometer was employed to measure the transmittance and reflectance of the samples in the wavelength range from 2 μm to 20 μm. Accurate carrier mobility and ionization models were identified after carefully reviewing the available literature, and then incorporated into the Drude model to predict the dielectric function of doped Si. The radiative properties of doped Si samples were calculated by treating the doped region as multilayer thin films of different doping concentrations on a thick lightly doped Si substrate. The measured spectral transmittance and reflectance agree well with the model predictions. The knowledge gained from this study will aid future design and fabrication of doped Si microstructures as wavelength selective emitters and absorbers in the midinfrared region.

Modeling Infrared Radiative Properties of Heavily Doped Silicon Complex Gratings With Geometric Modifications

2009 ◽  
Author(s):  
Ai-Hua Wang ◽  
Pei-feng Hsu ◽  
Yu-Bin Chen ◽  
Lin-Hua Liu
Keyword(s):  
Radiative Properties ◽  
Cavity Resonance ◽  
Resonance Excitation ◽  
Rigorous Coupled Wave Analysis ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Rigorous Coupled Wave ◽  
Nanoscale Features ◽  
Difference Time ◽  
Plasmon Polaritons

Based on the prior work by authors, radiative properties of modified complex gratings with nanoscale features are studied. The purpose of this work is to demonstrate, even preliminary, the possibility of using complex gratings and nanoscale surface features to modify far field radiative properties. A finite-difference time-domain numerical scheme was used to model the infrared radiative properties of heavily doped silicon simple and complex gratings. The solutions were validated with those of rigorous coupled-wave analysis method. By properly choosing the carrier concentration and geometry, silicon complex gratings exhibit a broadband absorptance peak resulting from the excitation of surface plasmon polaritons. Meanwhile, the absorptance of four modified complex gratings with attached features has been numerically investigated for the impacts of the attached structures. Firstly, though absorptance spectra of gratings almost remain unchanged, their locations shift towards longer wavelengths. Secondly, the spectral absorptance peak of two modified complex gratings is wider than that of gratings without attached features due to the cavity resonance excitation. Thirdly, the spectral absorptance of complex gratings with square features in three sizes was compared and shows that the peak wavelength shifts toward longer wavelengths with enlarged feature size.

Trap controlled minority-carrier mobility in heavily doped silicon

Solar Cells ◽  
1985 ◽  
Vol 14 (3) ◽  
pp. 211-217 ◽  
Author(s):  
A. Neugroschel ◽  
F.A. Lindholm ◽  
C.T. Sah
Keyword(s):  
Carrier Mobility ◽  
Minority Carrier ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Minority Carrier Mobility

Band‐to‐band and free‐carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature

1991 ◽  
Vol 69 (6) ◽  
pp. 3687-3690 ◽  
Author(s):  
S. C. Jain ◽  
A. Nathan ◽  
D. R. Briglio ◽  
D. J. Roulston ◽  
C. R. Selvakumar ◽  
...  
Keyword(s):  
Room Temperature ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Coefficients ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

scholarly journals Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices

AIP Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 067140 ◽  
Author(s):  
Jitendra Singh ◽  
Sapana Ranwa ◽  
Jamil Akhtar ◽  
Mahesh Kumar
Keyword(s):  
Residual Stress ◽  
Room Temperature ◽  
Zno Films ◽  
Mems Devices ◽  
Si Substrate

scholarly journals Dependence of static dielectric constant of silicon on resistivity at room temperature

2004 ◽  
Vol 1 (2) ◽  
pp. 237-247 ◽  
Author(s):  
Stojan Ristic ◽  
Aneta Prijic ◽  
Zoran Prijic
Keyword(s):  
Dielectric Constant ◽  
Low Temperatures ◽  
Room Temperature ◽  
Static Dielectric Constant ◽  
Doped Silicon ◽  
Heavily Doped

The static dielectric constant of the heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by taking into account the contribution of non-ionized impurities at room temperature to the static dielectric constant behavior.

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