About a Conjunction between Electrical and Optical Phenomena in p-Type Heavily Doped Silicon at Room Temperature

1995 ◽  
Vol 191 (1) ◽  
pp. 161-169 ◽  
Author(s):  
H. Van Cong ◽  
G. Debiais
Keyword(s):  
Room Temperature ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Optical Phenomena ◽  
P Type

Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

2007 ◽  
Author(s):  
S. Basu ◽  
B. J. Lee ◽  
Z. M. Zhang
Keyword(s):  
Carrier Mobility ◽  
Room Temperature ◽  
Radiative Properties ◽  
Multilayer Thin Films ◽  
Mems Devices ◽  
Si Substrate ◽  
Model Predictions ◽  
Doped Silicon ◽  
Infrared Spectrometer ◽  
Heavily Doped

This paper describes an experimental investigation on the infrared radiative properties of heavily-doped silicon (Si) at room temperature. Lightly-doped Si wafers were ion implanted with boron and phosphorus atoms to doping concentrations of 1×1020 and 1×1021 cm−3. Rapid thermal annealing was performed to activate the implanted dopants. A Fourier-transform infrared spectrometer was employed to measure the normal transmittance as well as reflectance of the samples in the spectral region from 2 to 20 μm. Accurate carrier mobility and ionization models were identified after carefully reviewing the available literature, and then incorporated into Drude model to predict the dielectric function of doped Si. The radiative properties of doped Si samples were calculated by treating the doped region as multilayer thin films of different doping concentrations on a thick Si substrate. The measured spectral transmittance and reflectance agree well with the model predictions. The results obtained from this study will facilitate the future applications of heavily-doped Si in semiconductor as well as MEMS devices.

Butane Sensing Property of Si-ZnO Nanowires p-n Junction

2011 ◽  
Vol 364 ◽  
pp. 260-265 ◽  
Author(s):  
T.Y. Tiong ◽  
Chang Fu Dee ◽  
M.M. Salleh ◽  
Majlis B. Yeop ◽  
M. Yahaya
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Zno Nanowires ◽  
Vapour Transport ◽  
Initial State ◽  
Resistance Change ◽  
Boron Doped ◽  
Doped Silicon ◽  
Minimum Power Consumption ◽  
P Type

The p-n junction has been formed by using p-type boron doped silicon and n-type ZnO nanowires (NWs). It was prepared by using simple vapour-transport deposition method. Gas sensing property has been examined by measuring the resistance change of the junction sample towards 1 % of butane gas at room temperature. Significant improvement of sensing behaviour was observed from the fabricated junction sample when it was compared to sample of non-p-n junction ZnO NWs. The increase in the sensitivity of the p-n junction ZnO NWs and the ability to regain the sensing power by returning back to the initial state at room temperature are useful for future sensing device with minimum power consumption. Keywords: ZnO nanowires, Si-ZnO nanowires p-n junction, room temperature sensing and butane gas

Band‐to‐band and free‐carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature

1991 ◽  
Vol 69 (6) ◽  
pp. 3687-3690 ◽  
Author(s):  
S. C. Jain ◽  
A. Nathan ◽  
D. R. Briglio ◽  
D. J. Roulston ◽  
C. R. Selvakumar ◽  
...  
Keyword(s):  
Room Temperature ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Absorption Coefficients ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

Fabrication and characterization of p-type heavily doped silicon quantum dots

2017 ◽  
Author(s):  
S. Mizoguchi ◽  
N. Shimatani ◽  
T. Makino ◽  
Y. Yamaoka ◽  
T. Kodera
Keyword(s):  
Quantum Dots ◽  
Silicon Quantum Dots ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Fabrication And Characterization ◽  
P Type

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

1990 ◽  
Vol 204 ◽  
Author(s):  
C. Wang ◽  
C.H. Bjorkman ◽  
D.R. Lee ◽  
M.J. Williams ◽  
G. Lucovsky
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Thin Films ◽  
Mos Devices ◽  
Exit Port ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTWe have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

scholarly journals Dependence of static dielectric constant of silicon on resistivity at room temperature

2004 ◽  
Vol 1 (2) ◽  
pp. 237-247 ◽  
Author(s):  
Stojan Ristic ◽  
Aneta Prijic ◽  
Zoran Prijic
Keyword(s):  
Dielectric Constant ◽  
Low Temperatures ◽  
Room Temperature ◽  
Static Dielectric Constant ◽  
Doped Silicon ◽  
Heavily Doped

The static dielectric constant of the heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by taking into account the contribution of non-ionized impurities at room temperature to the static dielectric constant behavior.

Properties Of Cosb3 Films Grown by Pulsed Laser Deposition

1997 ◽  
Vol 478 ◽  
Author(s):  
Hans-Martin Christen ◽  
David G. Mandrus ◽  
David P. Norton ◽  
Lynn A. Boatner ◽  
Brian C. Sales
Keyword(s):  
Laser Ablation ◽  
Carrier Density ◽  
Room Temperature ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
Heavily Doped ◽  
Background Gas ◽  
P Type

AbstractPolycrystalline CoSb3 films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas.Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3×1020 holes/cm3. The Hall mobility is found to be 50 to 60 cm2 /Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

Interstitial Carbon in p-Type Copper-Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 302-307
Author(s):  
Nikolai Yarykin ◽  
Jörg Weber
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Lower Half ◽  
Interstitial Carbon ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
P Type

The spectrum of defects produced by 5 MeV electron irradiation at room temperature in the oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the interstitial carbon defects (Ci), which are abundant in irradiated copper-free samples, are not detected directly after irradiation. The phenomenon is attributed to the formation of a {Cui, Ci} complexes which exhibit no deep levels in the lower half of the band gap. The complexes are shown to dissociate under anneals at 300-340 K resulting in the appearance of the Ci species.

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