Scalable Nanomanufacturing of Metasurfaces Using Nanosphere Photolithography

Author(s):  
Jacob S. Wilson ◽  
Wipula P. R. Liyanage ◽  
Michelle L. Gegel ◽  
Manashi Nath ◽  
Edward C. Kinzel

We report on using Nanosphere Photolithography (NPL) for submicron patterning of Frequency Selective Surfaces (FSS). NPL is a combination of two techniques; colloidal nanolithography — where nanospheres form a self-assembled hexagonal close-packed (HCP) array when dispensed on a surface, and photonic jets — which are created when light is incident onto a microsphere in contact with a surface. NPL creates a mask-free HCP hole array in the photoresist. This pattern can be used with evaporation and lift-off to create an array of antenna elements, constituting the FSS. Alternatively, electrodeposition techniques can be used to deposit the metal elements. The later is particularly appealing as it lends itself to reel-to-reel fabrication techniques. Finally, we demonstrate that geometries other than simple hole arrays can be patterned in the photoresist by exposing the microsphere array with off normal incidence light.

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2302
Author(s):  
Andrew I. Yakimov ◽  
Victor V. Kirienko ◽  
Aleksei A. Bloshkin ◽  
Dmitrii E. Utkin ◽  
Anatoly V. Dvurechenskii

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 μm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ=1.2 μm and by 34 times at λ≈1.6 μm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).


1988 ◽  
Vol 24 (14) ◽  
pp. 901 ◽  
Author(s):  
A.M.M.A. Allam ◽  
E.A. Parker

2013 ◽  
Vol 64 (12) ◽  
pp. 659-661
Author(s):  
Eiichi KONDOH ◽  
Kakeru TAMAI ◽  
Michio MATSUMURA
Keyword(s):  

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