Improved Thermoelectric Properties of SixGe1−x by the “Nanoparticle-in-Alloy” Approach

Author(s):  
Shidong Wang ◽  
Natalio Mingo

We theoretically find that embedding silicide nanoparticles in SixGe1-x alloys is able to considerably improve the figure of merit (ZT). We have computed the thermal conductivity as a function of the sizes of NiSi2 and CoSi2 nanoparticles. We find that the optimal nanoparticle diameters minimizing the composite’s thermal conductivity are 6.9 nm for NiSi2 and 12.6 nm for CoSi2 at room temperature. We provide validity ranges of nanoparticle volume fractions that will not reduce the thermoelectric power factor, but will considerably decrease the thermal conductivity. Embedding NiSi2 or CoSi2 nanoparticles in SixGe1-x may lead to a 5-fold increase of figure of merit (ZT ∼ 0.5) at room temperature and 2.8 times increase (ZT ∼ 2.0) at 900 K. The proposed materials with high figures of merit are promising candidates to be used in integrated micro refrigerators in chips and thermoelectric power generation and waste heat recovery.

Author(s):  
Tong Xing ◽  
Qingfeng Song ◽  
Pengfei Qiu ◽  
Qihao Zhang ◽  
Ming Gu ◽  
...  

GeTe-based materials have a great potential to be used in thermoelectric generators for waste heat recovery due to their excellent thermoelectric performance, but their module research is greatly lagging behind...


2009 ◽  
Vol 1166 ◽  
Author(s):  
Julio E. Rodríguez ◽  
J. A. Niño

AbstractThermoelectric properties of polycrystalline La0.75Sr0.25Co1-xMnxO3-δ(0<x<0.08) (LSCoO-Mn) compounds have been studied. The samples were grown by solid-state reaction method; their transport properties were studied in the temperature range between 100 and 290K, as a function of temperature and the manganese content. The Seebeck coefficient (S) is positive over the measured temperature range and its magnitude increases with the manganese content up to values close to 160 μV/K. The electrical resistivity (ρ) goes from metallic to semiconducting behavior as the Mn level increases, at room temperature, ρ(T) exhibit values less than 4mΩ-cm. From S(T), ρ(T) and κ(T) data, the thermoelectric power factor and the figure of merit were determined. These performance parameters reach maximum values around 18 μW/K2-cm and 0.2, respectively. The observed behavior in the transport properties become these compounds potential thermoelectric materials, which could be used in thermoelectric applications.


2013 ◽  
Vol 665 ◽  
pp. 179-181 ◽  
Author(s):  
Anup V. Sanchela ◽  
Varun Kushwaha ◽  
Ajay. D. Thakur ◽  
C.V. Tomy

FeSb2 was recently found to be a narrow-gap semiconductor with strong electronelectron correlation and a large thermopower at low temperatures. We report measurements of the electrical resistivity, Seebeck coefficient and thermal conductivity between 5 K to 300 K on polycrystalline samples of FeSb2 and FeSb1.9. We found that the deficiency of Sb in the parent compound leads to a giant anomalous peak in thermopower (S) at low temperatures, reaching ~ 426 μV/K at 20 K, resulting in a high thermoelectric power factor at low temperatures, achieving 10 μW/K2m at 27 K.. Consequently, a significantly enhanced thermoelectric figure of merit ZT ~ 0.0015 is achieved near room temperature. At low temperatures there is no improvement in ZT values due to the high thermal conductivity (phonon dominant region). Keywords: Seebeck coefficient, thermal conductivity, resistivity, thermoelectric figure of merit. PACS: 72.20.Pa, 71.27.+a, 71.28.+d


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