Modeling and Simulation of Focused Ion Beam Based Single Digital Nano Hole Fabrication for DNA and Macromolecule Characterization

2008 ◽  
Author(s):  
Jack Zhou ◽  
Guoliang Yang
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Electrochemical Etching ◽  
Ion Beam ◽  
Machining Process ◽  
Single Digit ◽  
Nano Fabrication ◽  
Dna And Rna ◽  
Epitaxial Deposition ◽  
Micro Holes

In this paper we describe a top down nano-fabrication method to make single-digit nanoholes that we aim to use for DNA and RNA characterization. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes (0.2 μm to 0.02μm) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), or other methods. 3) Reducing the hole to less than 10 nm by epitaxial deposition, FIB or EB induced deposition. One specific aim for this paper is to model, simulate and control the focused ion beam machining process to fabricate holes which can reach single-digit nanometer scale on solid-state thin films. Preliminary work has been done on the thin film (30 nm in thickness) preparation, sub-micron hole fabrication, and ion beam induced deposition, and results are presented.

Focused Ion-Beam Based Nanohole Modeling, Simulation, Fabrication, and Application

2010 ◽  
Vol 132 (1) ◽  
Author(s):  
Jack Zhou ◽  
Guoliang Yang
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Electrochemical Etching ◽  
Ion Beam ◽  
Machining Process ◽  
Nanometer Scale ◽  
Free Standing ◽  
Single Digit ◽  
Epitaxial Deposition ◽  
And Control

There are three major steps toward the fabrication of a single-digit nanohole: (1) preparing the free-standing thin film by epitaxial deposition and electrochemical etching, (2) making submicron holes (0.2–0.02 μm) by focused ion beam (FIB), and (3) reducing the hole to less than 10 nm by FIB-induced deposition. One specific aim for this paper is to model, simulate, and control the focused ion-beam machining process to fabricate holes that can reach a single-digit nanometer scale on solid-state thin films. Preliminary work has been done on the thin film (30 nm in thickness) preparation, submicron hole fabrication, and ion-beam-induced deposition, and the results are presented.

Fabrication of Dc-SQUID with As-Grown YBaCuO Thin Film by Focused Ion Beam

1990 ◽  
pp. 987-990
Author(s):  
M. Tanioku ◽  
K. Kuroda ◽  
K. Kojima ◽  
K. Hamanaka ◽  
Y. H. Hisaoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam

Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Device Structure ◽  
Ion Beam Etching ◽  
Nanometer Size ◽  
Nano Fabrication ◽  
Micro Raman Spectroscopy ◽  
Device Structures ◽  
Effect Transistor

AbstractWe report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

Temperature Measurement by Using Metal Thin Film Thermocouples

2003 ◽  
Author(s):  
Koji Miyazaki ◽  
Hiroshi Tsukamoto ◽  
Takahiro Miike ◽  
Toshiaki Takamiya
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Glass Plate ◽  
Mean Free Path ◽  
Dimensional Structure ◽  
Measured Temperature ◽  
Metal Thin Film ◽  
Thin Film Thermocouples ◽  
Thermocouple Junction

We fabricate metal thin film thermocouples (TFTCs). Au-Pt, Cu-Ni, and W-Ni are deposited on a glass plate using standard thin film processes. The dimension of thermocouple junction is 300μm × 300μm. The thermoelectric powers of TFTCs are different from those of bulk because diffusion of electrons is restricted by the very thin film. The film thickness of TFTCs is of the same order as the mean free path of electrons. However TFTCs are still useful for temperature measurements because the thermoelectric voltage is proportional to measured temperature at thermocouple junction. The response time of Au-Pt TFTCs is about 30ns when the surface of the glass is heated by a YAG pulsed laser. The result compares favorably with measurements by a thermoreflectance method. We also describe W-Ni nano-TFTCs fabricated by Focused Ion Beam for the measurement of temperature distribution in a sub-micron area. In order to reduce the size of the TFTCs we employ a 3-dimensional structure.

Fracture Toughness of Titanium - Titanium Nitride Multi-Layer Thin Film

2008 ◽  
Author(s):  
Mohan Prasad Manoharan ◽  
Amit Desai ◽  
Amanul Haque
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Titanium Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
New Class ◽  
Tin Coatings ◽  
Film Specimen ◽  
Cantilever Bending ◽  
Layer Thin Film

Thin film specimens of titanium - titanium nitride multilayer erosion resistant coating were prepared using liftout technique in Focused Ion Beam - Scanning Electron Microscope (SEM). The fracture toughness of the thin film specimen was measured in situ using a cantilever bending experiment in SEM to be 11.33 MPa/m0.5, twice as much as conventional TiN coatings. Ti–TiN multi-layer coatings are part of a new class of advanced erosion resistant coatings and this paper discusses an experimental technique to measure the fracture toughness of these coatings.

A Membrane Deflection Fracture Experiment to Investigate Fracture Toughness of Freestanding MEMS Materials

2003 ◽  
Vol 795 ◽  
Author(s):  
H. D. Espinosa ◽  
B. Peng
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Mean Value ◽  
Advanced Materials ◽  
Ultrananocrystalline Diamond ◽  
Membrane Deflection

ABSTRACTThis paper presents a novel Membrane Deflection Fracture Experiment (MDFE) to investigate the fracture toughness of MEMS and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing pre-existing cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.7 MPa m1/2. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 7.2 MPa m1/2. Comparison of these two values, using the model proposed by Drory et al. [9], provides a correction factor of 2/3, which corresponds to a mean value of ρ/2x=1/2.

Focused Ion Beam Nano-Machined Structures For Strain Analysis By A Moiré Technique

2002 ◽  
Vol 761 ◽  
Author(s):  
Biao Li ◽  
Huimin Xie ◽  
Xin Zhang
Keyword(s):  
Focused Ion Beam ◽  
Microelectromechanical Systems ◽  
Ion Beam ◽  
Accurate Determination ◽  
Strain Analysis ◽  
Local Strain ◽  
Ion Milling ◽  
Nano Fabrication ◽  
In Situ Deposition ◽  
Potential Applications

ABSTRACTThe accurate determination of residual stress/strain in thin films is especially important in the emerging field of MicroElectroMechanical Systems (MEMS). In this article, a focused ion beam (FIB) moiré method is proposed and demonstrated to measure the strain in MEMS structures. This technique is based on the advantages of the FIB system in nano-fabrication, imaging, in-situ deposition, and fine adjustment. Nano-grating lines with 70 nm width and 140 nm spacing are directly written on the top of the MEMS structures by ion milling without the requirement of an etch mask. The FIB moiré pattern is formed by the interference between a prepared specimen grating and FIB raster scan lines. The strain of the MEMS structures is derived by calculating the average spacing of moiré fringes. Since the local strain of a MEMS structure itself can be monitored during the process, the FIB moiré technique has many potential applications in the mechanical metrology of MEMS. As an example, the strain distribution along the sticking MEMS structures, and the contribution of surface oxidization and mass loading to the cantilever strain is determined by this FIB moiré technique.

Etching characteristics of TiNi thin film by focused ion beam

2004 ◽  
Vol 225 (1-4) ◽  
pp. 54-58 ◽  
Author(s):  
D.Z. Xie ◽  
B.K.A. Ngoi ◽  
Y.Q. Fu ◽  
A.S. Ong ◽  
B.H. Lim
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam
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