Focused Ion Beam Nano-Machined Structures For Strain Analysis By A Moiré Technique

2002 ◽  
Vol 761 ◽  
Author(s):  
Biao Li ◽  
Huimin Xie ◽  
Xin Zhang
Keyword(s):  
Focused Ion Beam ◽  
Microelectromechanical Systems ◽  
Ion Beam ◽  
Accurate Determination ◽  
Strain Analysis ◽  
Local Strain ◽  
Ion Milling ◽  
Nano Fabrication ◽  
In Situ Deposition ◽  
Potential Applications

ABSTRACTThe accurate determination of residual stress/strain in thin films is especially important in the emerging field of MicroElectroMechanical Systems (MEMS). In this article, a focused ion beam (FIB) moiré method is proposed and demonstrated to measure the strain in MEMS structures. This technique is based on the advantages of the FIB system in nano-fabrication, imaging, in-situ deposition, and fine adjustment. Nano-grating lines with 70 nm width and 140 nm spacing are directly written on the top of the MEMS structures by ion milling without the requirement of an etch mask. The FIB moiré pattern is formed by the interference between a prepared specimen grating and FIB raster scan lines. The strain of the MEMS structures is derived by calculating the average spacing of moiré fringes. Since the local strain of a MEMS structure itself can be monitored during the process, the FIB moiré technique has many potential applications in the mechanical metrology of MEMS. As an example, the strain distribution along the sticking MEMS structures, and the contribution of surface oxidization and mass loading to the cantilever strain is determined by this FIB moiré technique.

Focused Ion Beam Nano-Machined Structures For Strain Analysis By A Moiré Technique

2002 ◽  
Vol 741 ◽  
Author(s):  
Biao Li ◽  
Huimin Xie ◽  
Xin Zhang
Keyword(s):  
Focused Ion Beam ◽  
Microelectromechanical Systems ◽  
Ion Beam ◽  
Accurate Determination ◽  
Strain Analysis ◽  
Local Strain ◽  
Ion Milling ◽  
Nano Fabrication ◽  
In Situ Deposition ◽  
Potential Applications

ABSTRACTThe accurate determination of residual stress/strain in thin films is especially important in the emerging field of MicroElectroMechanical Systems (MEMS). In this article, a focused ion beam (FIB) moiré method is proposed and demonstrated to measure the strain in MEMS structures. This technique is based on the advantages of the FIB system in nano-fabrication, imaging, in-situ deposition, and fine adjustment. Nano-grating lines with 70 nm width and 140 nm spacing are directly written on the top of the MEMS structures by ion milling without the requirement of an etch mask. The FIB moiré pattern is formed by the interference between a prepared specimen grating and FIB raster scan lines. The strain of the MEMS structures is derived by calculating the average spacing of moiré fringes. Since the local strain of a MEMS structure itself can be monitored during the process, the FIB moiré technique has many potential applications in the mechanical metrology of MEMS. As an example, the strain distribution along the sticking MEMS structures, and the contribution of surface oxidization and mass loading to the cantilever strain is determined by this FIB moiré technique.

A Consideration of Cleavage Crack Propagation in Fe2Si Steel

2008 ◽  
Vol 385-387 ◽  
pp. 1-4 ◽  
Author(s):  
Fabio Sorbello ◽  
Peter E.J. Flewitt ◽  
A.G. Crocker ◽  
Gillian E. Smith
Keyword(s):  
Crack Propagation ◽  
Focused Ion Beam ◽  
Process Zone ◽  
Ion Beam ◽  
Local Strain ◽  
Propagation Path ◽  
Propagation Mechanism ◽  
Cleavage Crack ◽  
Ion Milling ◽  
Bcc Structure

It is well established that within the lower-shelf temperature range of Fe2-3Si polycrystalline steels, the brittle fracture occurs predominately by transgranular cleavage, unless subject to embrittling heat-treatments. The cleavage fracture develops on the well established {001} planes of the bcc structure. In this paper we revisit the growth, of these cleavage cracks by considering crack propagation in single crystals of Fe2Si steel. Three point bend specimens manufactured from oriented crystals have been tested by impact loading at a temperature of -196°C. High spatial resolution focused ion beam imaging combined with ion milling is used to examine in detail the crack propagation path and has provided a new insight into the mechanisms involved. In particular it has been established that within the process zone of the propagating cracks local strain is accommodated by the formation of {112} twins. The results are discussed with respect to the overall crack propagation mechanism.

C-MEMS/NEMS: A Novel Technology for Nanoscale Material Formation From Graphite Fiber to Ni and Si Nanowires

2004 ◽  
Author(s):  
Chunlei Wang ◽  
Rabih Zaouk ◽  
Kartikeya Malladi ◽  
Lili Taherabadi ◽  
Marc Madou
Keyword(s):  
Focused Ion Beam ◽  
Microelectromechanical Systems ◽  
Ion Beam ◽  
Dna Arrays ◽  
Si Nanowires ◽  
Sem Image ◽  
Carbon Structures ◽  
Potential Applications ◽  
The Many ◽  
Carbon Microelectromechanical Systems

Carbon microelectromechanical systems (C-MEMS) and carbon nanoelectromechanical system (C-NEMS) have received much attention because of the many potential applications. Some important applications include: DNA arrays, glucose sensors, microbatteries and biofuel cells. Microfabrication of carbon structures using current processing technology, including focused ion beam (FIB)1 and reactive ion etching (RIE)2, is time consuming and expensive. Low feature resolution, and poor repeatability of the carbon composition as well as widely varying properties of the resulting devices limits the use of screen printing of commercial carbon inks for C-MEMS. Our newly developed C-MEMS microfabrication technique is based on the pyrolysis of photo patterned resists34. Figure 1(a) shows a typical SEM image of C-MEMS/NEMS features with carbon posts connected by carbon fibers. Figure 1(b) shows a typical carbon post with carbon nanofibers on its side surfaces.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Nanomechanical Characterization in the FIB

2005 ◽  
Author(s):  
Thomas M. Moore
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Materials Characterization ◽  
Depth Of Focus ◽  
Ion Milling ◽  
Nano Technology ◽  
Physical Behavior ◽  
Nanomechanical Testing ◽  
Load Cells ◽  
Scanning Electron

Abstract The availability of the focused ion beam (FIB) microscope with its excellent imaging resolution, depth of focus and ion milling capability has made it an appealing platform for materials characterization at the sub-micron, or "nano" level. This article focuses on nanomechanical characterization in the FIB, which is an extension of the FIB capabilities into the realm of nano-technology. It presents examples that demonstrate the power and flexibility of nanomechanical testing in the FIB or scanning electron microscope with a probe shaft that includes a built-in strain gauge. Loads that range from grams to micrograms are achievable. Calibration is limited only by the availability of calibrated load cells in the smallest load ranges. Deflections in the range of a few nanometers range can be accurately applied. Simultaneous electrical, mechanical, and visual data can be combined to provide a revealing study of physical behavior of complex and dynamic nanostructures.

Strain analysis in MEMS/NEMS structures and devices by using focused ion beam system

2004 ◽  
Vol 111 (1) ◽  
pp. 57-62 ◽  
Author(s):  
Biao Li ◽  
Xiaosong Tang ◽  
Huimin Xie ◽  
Xin Zhang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Strain Analysis ◽  
Beam System

Cutting-Edge Sample Preparation from FIB to Ar Concentrated Ion Beam Milling of Advanced Semiconductor Devices

2020 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
R. Li ◽  
M.L. Ray ◽  
P.E. Fischione ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Specific Area ◽  
Cutting Edge ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sample Preparation Technique

Abstract Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.

Assessment of Deformation using the Focused Ion Beam Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 530-531
Author(s):  
M.G. Burke ◽  
P.T. Duda ◽  
G. Botton ◽  
M. W. Phaneuf
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Site Specificity ◽  
Alloy 600 ◽  
The Past ◽  
Transmission Electron ◽  
Wide Range ◽  
Potential Applications ◽  
Beam Technique ◽  
Significant Attention

Focused Ion Beam (FIB) micromachining techniques have gained significant attention over the past few years as a promising method for the preparation of a variety of metallic and nonmetallic materials for subsequent characterization using transmission electron microscopy (TEM) The advantage of the FIB in terms of site specificity and speed for the preparation of uniform electron transparent sections has opened a wide range of potential applications in materials characterization. The ability to image the sample in the FIB can also provide important microstructural data for materials analysis. In this study, both conventionally electropolished and FIB-ed specimens were prepared in order to characterize the microstructure of a commercially-produced tube of Alloy 600 (approximately Ni-15 Cr-10 Fe- 0.05 C). The electropolished samples were prepared using a solution of 20% HClO4 - 80% CH3OH at ∼-40°C. The FIB sections were obtained from a cross-section of the tube that had been mechanically thinned to ∼100 μm. The section was thinned in a Micrion 2500 FIB system with a Ga ion beam at 50 kV accelerating voltage.

scholarly journals FIB-SEM Three-Dimensional Tomography for Characterization of Carbon-Based Materials

2019 ◽  
Vol 2019 ◽  
pp. 1-8 ◽  
Author(s):  
Nan Nan ◽  
Jingxin Wang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
3D Tomography ◽  
Tomography System ◽  
Internal Structures ◽  
Potential Applications ◽  
Scanning Electron ◽  
Carbon Based

A review on the recent advances of the three-dimensional (3D) characterization of carbon-based materials was conducted by focused ion beam-scanning electron microscope (FIB-SEM) tomography. Current studies and further potential applications of the FIB-SEM 3D tomography technique for carbon-based materials were discussed. The goal of this paper is to highlight the advances of FIB-SEM 3D reconstruction to reveal the high and accurate resolution of internal structures of carbon-based materials and provide suggestions for the adoption and improvement of the FIB-SEM tomography system for a broad carbon-based research to achieve the best examination performances and enhance the development of innovative carbon-based materials.

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