scholarly journals Experimental Evaluation of a Heat Transport System for a High-Temperature Storage Unit

2019 ◽  
Author(s):  
Tim Lanz ◽  
Veronika Jilg ◽  
Werner Kraft ◽  
Peter Vetter ◽  
Benedikt Sebastian Volk
Keyword(s):  
High Temperature ◽  
Heat Transport ◽  
Transport System ◽  
Experimental Evaluation ◽  
Storage Unit ◽  
High Temperature Storage ◽  
Temperature Storage

High-temperature storage and cycling of C-LiFePO4/graphite Li-ion cells

2005 ◽  
Vol 7 (7) ◽  
pp. 669-673 ◽  
Author(s):  
K. Amine ◽  
J. Liu ◽  
I. Belharouak
Keyword(s):  
High Temperature ◽  
High Temperature Storage ◽  
Li Ion ◽  
Temperature Storage

High temperature storage reliability investigation of the Al–Cu wire bond interface

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  
Keyword(s):  
High Temperature ◽  
Wire Bond ◽  
High Temperature Storage ◽  
Bond Interface ◽  
Temperature Storage

High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman
Keyword(s):  
High Temperature ◽  
Gamma Radiation ◽  
Radiation Effects ◽  
Storage Period ◽  
Bending Test ◽  
Three Point Bending ◽  
Micromechanical Properties ◽  
3D Ct Scan ◽  
High Temperature Storage ◽  
Temperature Storage

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.

scholarly journals FCCSP IMC growth under reliability stress follows automotive criteria

2019 ◽  
Vol 3 (1) ◽  
pp. 70-83
Author(s):  
Wei Wei Liu ◽  
Berdy Weng ◽  
Scott Chen
Keyword(s):  
High Temperature ◽  
Flip Chip ◽  
Stress Test ◽  
Temperature Cycling ◽  
Content Type ◽  
Initial Stage ◽  
High Temperature Storage ◽  
Temperature Cycling Test ◽  
Temperature Storage

Purpose The Kirkendall void had been a well-known issue for long-term reliability of semiconductor interconnects; while even the KVs exist at the interfaces of Cu and Sn, it may still be able to pass the condition of unbias long-term reliability testing, especially for 2,000 cycles of temperature cycling test and 2,000 h of high temperature storage. A large number of KVs were observed after 200 cycles of temperature cycling test at the intermetallic Cu3Sn layer which locate between the intermetallic Cu6Sn5 and Cu layers. These kinds of voids will grow proportional with the aging time at the initial stage. This paper aims to compare various IMC thickness as a function of stress test, the Cu3Sn and Cu6Sn5 do affected seriously by heat, but Ni3Sn4 is not affected by heat or moisture. Design/methodology/approach The package is the design in the flip chip-chip scale package with bumping process and assembly. The package was put in reliability stress test that followed AEC-Q100 automotive criteria and recorded the IMC growing morphology. Findings The Cu6Sn5 intermetallic compound is the most sensitive to continuous heat which grows from 3 to 10 µm at high temperature storage 2,000 h testing, and the second is Cu3Sn IMC. Cu6Sn5 IMC will convert to Cu3Sn IMC at initial stage, and then Kirkendall void will be found at the interface of Cu and Cu3Sn IMC, which has quality concerning issue if the void’s density grows up. The first phase to form and grow into observable thickness for Ni and lead-free interface is Ni3Sn4 IMC, and the thickness has little relationship to the environmental stress, as no IMC thickness variation between TCT, uHAST and HTSL stress test. The more the Sn exists, the thicker Ni3Sn4 IMC will be derived from this experimental finding compare the Cu/Ni/SnAg cell and Ni/SnAg cell. Research limitations/implications The research found that FCCSP can pass automotive criteria that follow AEC-Q100, which give the confidence for upgrading the package type with higher efficiency and complexities of the pin design. Practical implications This result will impact to the future automotive package, how to choose the best package methodology and what is the way to do the package. The authors can understand the tolerance for the kind of flip chip package, and the bump structure is then applied for high-end technology. Originality/value The overall three kinds of bump structures, Cu/Ni/SnAg, Cu/SnAg and Ni/SnAg, were taken into consideration, and the IMC growing morphology had been recorded. Also, the IMC had changed during the environmental stress, and KV formation was reserved.

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