ABSTRACTThe ac conductance-voltage (G–V) characteristics at various frequencies have been measured in MOS diodes which suffered constant current stress by Fowler–Nordheim (F–N) electron injection from Si substrate.It is found that a double-peak structure appears in G–V curve and grows continuously with proceeded current stress.The growth of two kinds of interface states is elucidated after subtracting the effect of oxide capacitance and substrate resistance by a simple equivalent circuit analysis.
On the Double Peak Structure of Thermosyphon Geysering
