Selective epitaxial growth of GaAs on Si with strained short-period superlattices by molecular beam epitaxy under atomic hydrogen irradiation

2004 ◽  
Vol 22 (3) ◽  
pp. 1428 ◽  
Author(s):  
Takuto Tsuji ◽  
Hiroo Yonezu ◽  
Naoki Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Selective Epitaxial Growth ◽  
Gaas On Si ◽  
Short Period ◽  
Short Period Superlattices

Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

1999 ◽  
Vol 14 (3) ◽  
pp. 257-265 ◽  
Author(s):  
Eun Soo Kim ◽  
Noritaka Usami ◽  
Yasuhiro Shiraki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrates ◽  
Selective Epitaxial Growth ◽  
Gas Source

Raman scattering in GaP/AlP short-period superlattices grown by gas source molecular beam epitaxy

1992 ◽  
Vol 60-61 ◽  
pp. 553-558 ◽  
Author(s):  
R.K. Soni ◽  
H. Asahi ◽  
S. Emura ◽  
T. Watanabe ◽  
K. Asami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Gas Source ◽  
Short Period ◽  
Short Period Superlattices

Photoluminescence Fatigue in Laterally-Ordered (GaP)2/(InP)2 Short-Period-Superlattices (SPS) Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 325 ◽  
Author(s):  
X. C. Liu ◽  
S. Q. Gu ◽  
E. E. Reuter ◽  
S. G. Bishop ◽  
A. C. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Lower Energy ◽  
Molecular Beam ◽  
Continuous Illumination ◽  
Exciting Light ◽  
Quantum Well Structures ◽  
Short Period ◽  
Short Period Superlattices

AbstractSpontaneously laterally ordered (GaP)2/(InP)2 short period superlattices (SPS) grown by Molecular Beam Epitaxy (MBE) on nominal (100) GaAs substrates have been studied by photoluminescence (PL) spectroscopy. The samples studied included SPS comprising 110 pairs of (GaP)2/(InP)2 (total thickness σ90 nm) and multiquantum well structures in which quantum wells comprising 12 pairs of (GaP)2/(InP)2 SPS layers (thickness σ10 nm) are alternated with lattice-matched GaInP random alloy barrier layers. The 5K PL spectra include a σ1760 meV nearband edge band, and a much broader, lower energy (σ1670 meV) luminescence band that exhibits an unusual fatiguing behavior; its intensity diminishes monotonically during continuous illumination by the exciting light. This fatigued PL state is metastable at low temperatures. In the quantum well structure, although the relative intensity of the lower energy band is significantly weaker in comparison to the higher one, the fatiguing behavior still exists. However the fatiguing rate is slower in quantum well structures than that observed in the thick SPS film.

Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy

1991 ◽  
Vol 59 (14) ◽  
pp. 1735-1736 ◽  
Author(s):  
K. Aketagawa ◽  
T. Tatsumi ◽  
J. Sakai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Selective Epitaxial Growth

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

1987 ◽  
Vol 51 (19) ◽  
pp. 1512-1514 ◽  
Author(s):  
A. Okamoto ◽  
K. Ohata
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Selective Epitaxial Growth

Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs)m(InAs)n short-period superlattices grown by molecular beam epitaxy

1998 ◽  
Vol 73 (13) ◽  
pp. 1844-1846 ◽  
Author(s):  
A. G. Norman ◽  
S. P. Ahrenkiel ◽  
H. Moutinho ◽  
M. M. Al-Jassim ◽  
A. Mascarenhas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Short Period ◽  
Short Period Superlattices ◽  
Strain Dependent

scholarly journals Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

2010 ◽  
Vol 96 (2) ◽  
pp. 021904 ◽  
Author(s):  
E. Luna ◽  
B. Satpati ◽  
J. B. Rodriguez ◽  
A. N. Baranov ◽  
E. Tournié ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Short Period ◽  
Short Period Superlattices

Selective Epitaxial Growth of InAs on GaAs by Molecular Beam Epitaxy

1987 ◽  
Vol 26 (Part 2, No. 7) ◽  
pp. L1174-L1176 ◽  
Author(s):  
Akihiko Okamoto ◽  
Keiichi Ohata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Selective Epitaxial Growth
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