Innovative approach to nanoscale device fabrication and low-temperature nitride film growth

2005 ◽  
Vol 23 (6) ◽  
pp. 3116 ◽  
Author(s):  
Elshan A. Akhadov ◽  
D. E. Read ◽  
Alexander H. Mueller ◽  
Jacqueline Murray ◽  
Mark A. Hoffbauer
Keyword(s):  
Low Temperature ◽  
Film Growth ◽  
Device Fabrication ◽  
Innovative Approach ◽  
Nitride Film ◽  
Nanoscale Device

Atomic Force Microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)

2005 ◽  
Vol 202 (1) ◽  
pp. 3-3 ◽  
Author(s):  
Wei Chen ◽  
Kian Ping Loh ◽  
Ming Lin ◽  
Rong Liu ◽  
Andrew T. S. Wee
Keyword(s):  
Atomic Force Microscopy ◽  
Boron Nitride ◽  
Film Growth ◽  
Hexagonal Boron Nitride ◽  
Microscopy Study ◽  
Nitride Film ◽  
Atomic Force Microscopy Study ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Low Temperature Epitaxial Barium Titanate Thin Film Growth in High Vacuum CVD

2017 ◽  
Vol 4 (18) ◽  
pp. 1700116 ◽  
Author(s):  
Michael Reinke ◽  
Yury Kuzminykh ◽  
Felix Eltes ◽  
Stefan Abel ◽  
Thomas LaGrange ◽  
...  
Keyword(s):  
Thin Film ◽  
Barium Titanate ◽  
Low Temperature ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Barium Titanate Thin Film ◽  
Titanate Thin Film

Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Device Fabrication ◽  
Surface Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

LOW-TEMPERATURE SYNTHESIS OF NOVEL ZINC OXIDE SINGLE-SIDED COMB-LIKE STRUCTURE

2006 ◽  
Vol 05 (02n03) ◽  
pp. 207-212
Author(s):  
YAOHUA ZHANG ◽  
JUAN LIU ◽  
TONG LIU ◽  
XINGGUO LI
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Thermal Evaporation ◽  
Growth Direction ◽  
Device Fabrication ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Low Temperature Process

Single-sided ZnO nanocombs have been synthesized by thermal evaporation of Zn powders at 440°C through a vapor–solid (VS) process. The stem ribbon of the as-synthesized nanocomb takes a growth direction of [Formula: see text], and its top/bottom surfaces are [Formula: see text]. The nanoteeth grow epitaxially out of the stem ribbon along [0001]. Such a low temperature process may be useful in future device fabrication.

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