Surface kinetics modeling of silicon and silicon oxide plasma etching. I. Effect of neutral and ion fluxes on etching yield of silicon oxide in fluorocarbon plasmas

2006 ◽  
Vol 24 (5) ◽  
pp. 1906-1913 ◽  
Author(s):  
Ohseung Kwon ◽  
Herbert H. Sawin
Keyword(s):  
Plasma Etching ◽  
Silicon Oxide ◽  
Ion Fluxes ◽  
Surface Kinetics ◽  
Kinetics Modeling ◽  
Fluorocarbon Plasmas

Alternative Materials for Micro-Electro-Mechanical Device Construction

1992 ◽  
Vol 276 ◽  
Author(s):  
R. H. Hackeit ◽  
L. E. Larson
Keyword(s):  
Plasma Etching ◽  
Silicon Oxide ◽  
Metal Films ◽  
Device Processing ◽  
Low Temperature Processing ◽  
Alternative Materials ◽  
Lift Off ◽  
Mechanical Devices ◽  
Silicon Based ◽  
Process Constraints

ABSTRACTIn order to integrate micro actuators with III-V semiconductor devices, we have devised Micro-Electro-Mechanical devices (MEM's), constructed from materials and processes common to existing III-V device processing. These processes are substantially different from silicon based processes because of the requirements for low temperature processing and the use of gold-based metallizations.Our material choices include, vacuum deposited and plated metal films, silicon oxide and nitride dielectric layers, and polyimide layers and structures. Sacrificial layers are implemented with photoresist rather than the more common silicon dioxide. The processes available are based on the ‘lift off’ of unwanted areas of the metal films, wet plating of metals through openings in photoresist masks, and wet and plasma etching of metals and dielectrics.This paper will discuss why we are using these materials, the process constraints imposed by the materials, the measurement of some of the material properties, and will relate some progress in applications.

Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling

2020 ◽  
Vol 127 (20) ◽  
pp. 205301
Author(s):  
Shashwat Rathkanthiwar ◽  
Anisha Kalra ◽  
Rangarajan Muralidharan ◽  
Digbijoy N. Nath ◽  
Srinivasan Raghavan
Keyword(s):  
Nucleation Density ◽  
Surface Kinetics ◽  
Kinetics Modeling

FABRICATION OF NEARFIELD OPTICAL PROBE ARRAY USING VARIOUS NANOFABRICATION PROCEDURES

2003 ◽  
Vol 02 (04n05) ◽  
pp. 283-291
Author(s):  
S. S. CHOI ◽  
M. Y. JUNG ◽  
J. W. KIM ◽  
J. H. BOO ◽  
J. S. YANG
Keyword(s):  
Plasma Etching ◽  
Silicon Oxide ◽  
Optical Probe ◽  
Alkaline Solutions ◽  
Si Substrate ◽  
Oxide Aperture ◽  
Oxide Etching ◽  
Micron Size ◽  
Cantilever Array ◽  
Probe Array

The nanosize silicon oxide aperture on the cantilever array has been successfully fabricated as nearfield optical probe. The various semiconductor processes were utilized for subwavelength size aperture fabrication. The anisotropic etching of the Si substrate by alkaline solutions followed by anisotropic crystal orientation dependent oxidation, anisotropic plasma etching, isotropic oxide etching was carried out. The 3 and 4 micron size dot array were patterned on the Si(100) wafer. After fabrication of the V-groove shape by anisotropic TMAH etching, the oxide growth at 1000° C was performed to have an oxide etch-mask. The oxide layer on the Si(111) plane have been utilized as an etch mask for plasma dry etching and water-diluted HF wet etching for nanosize aperture fabrication. The Au thin layer was deposited on the fabricated oxide nanosize aperture on the cantilever array. The 160 nm metal apertures on (5×1) cantilever array were successfully fabricated using electron beam evaporator.

Uniformity control for high selective down-flow plasma etching on silicon oxide

2014 ◽  
Author(s):  
Fang-Hao Hsu ◽  
Kuo-Feng Lo ◽  
Xin-Guan Lin ◽  
Han-Hui Hsu ◽  
Yuan-Chieh Chiu ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Silicon Oxide

Pattern Transfer Process Using Innovative Polymers in Combined Thermal and UV Nanoimprint Lithography (TUV-NIL)

2007 ◽  
Vol 1002 ◽  
Author(s):  
Francesca Brunetti ◽  
Stefan Harrer ◽  
Giuseppe Scarpa ◽  
Paolo Lugli ◽  
Mike Kubenz ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Plasma Etching ◽  
Nanoimprint Lithography ◽  
Silicon Oxide ◽  
Pattern Transfer ◽  
Oxide Surface ◽  
Silicon Oxide Layer ◽  
Good Surface ◽  
Aspect Ratios ◽  
Oxygen Plasma Etching

ABSTRACTWe performed combined thermal and ultraviolet nanoimprint lithography (TUV-NIL) using a recently developed nanoimprint polymer (mr-NIL 6000 from Micro Resist technology GmbH) and achieved an imprinted feature size of 50 nm. We used commercially available 2-inch-diameter transparent quartz molds (NIL Technology, Denmark and Obducat, Sweden) comprising 150 nm to 190 nm-deep features of various shapes and aspect ratios with lateral dimensions ranging between 50 nm and 300 nm. The imprint polymer was spun onto a silicon substrate, covered with an oxide layer. After the TUV-NIL step, residual polymer layers at the bottom of the imprinted features were removed by oxygen plasma etching. Imprinted patterns were then transferred into the silicon oxide layer underneath by reactive ion etching (RIE). In a final step the residual polymer was stripped off the silicon oxide surface in an oxygen asher. All imprinted features as well as the corresponding pattern transfer results showed good surface and sidewall characteristics.

Influence of Charging on SiO2 Etching Profile Evolution Etched by Fluorocarbon Plasmas

2007 ◽  
Vol 555 ◽  
pp. 53-58 ◽  
Author(s):  
B. Radjenović ◽  
M. Radmilović-Radjenović ◽  
Z.Lj. Petrović
Keyword(s):  
Plasma Etching ◽  
Material Removal ◽  
Nonequilibrium Plasma ◽  
Simplified Model ◽  
Negative Consequences ◽  
Insulating Material ◽  
Fluorocarbon Plasmas ◽  
Positive Ions ◽  
The Monte Carlo Method ◽  
Etching Profile

A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 nonequilibrium plasma etching of SiO2.

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