Influence of Charging on SiO2 Etching Profile Evolution Etched by Fluorocarbon Plasmas

2007 ◽  
Vol 555 ◽  
pp. 53-58 ◽  
Author(s):  
B. Radjenović ◽  
M. Radmilović-Radjenović ◽  
Z.Lj. Petrović
Keyword(s):  
Plasma Etching ◽  
Material Removal ◽  
Nonequilibrium Plasma ◽  
Simplified Model ◽  
Negative Consequences ◽  
Insulating Material ◽  
Fluorocarbon Plasmas ◽  
Positive Ions ◽  
The Monte Carlo Method ◽  
Etching Profile

A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 nonequilibrium plasma etching of SiO2.

Chemical Smoothing of Rough Metal Surfaces

1992 ◽  
Vol 114 (4) ◽  
pp. 421-426 ◽  
Author(s):  
D. E. Kim ◽  
N. P. Suh
Keyword(s):  
Chemical Etching ◽  
Material Removal ◽  
Metal Surfaces ◽  
Cost Effective ◽  
Simplified Model ◽  
Irregular Surface ◽  
Diffusion Controlled ◽  
Dissolved Species ◽  
Smoothing Process ◽  
Fundamental Mass

A chemical etching method is investigated as a possible approach to smoothing metal surfaces automatically. In a chemical etching process metal is removed due to chemical reaction and the dissolved species are transported away from the surface mainly by diffusion. Controlled dynamics introduced to the etchant motion provide the conditions necessary to perform preferential material removal such that an irregular surface is smoothed. A simplified model for the smoothing process based on fundamental mass transfer understandings is presented. Experimental results of smoothing electric discharge machined 440 stainless steel specimens are also presented. This work is motivated by the need to develop a cost effective way to manufacture molds during secondary processing.

Energy Distribution of Ions in Plasma Etching Reactors

1986 ◽  
Vol 68 ◽  
Author(s):  
P. Briaud ◽  
G. Turban ◽  
B. Grolleau
Keyword(s):  
Plasma Etching ◽  
Low Frequency ◽  
Electron Attachment ◽  
Maximum Energy ◽  
High Electron ◽  
Energy Distributions ◽  
Electrostatic Analyzer ◽  
Positive Ions ◽  
Frequency Regime ◽  
Secondary Ion

AbstractThe energy distributions of the positive ions bombarding the ground electrode in a parallel plate plasma etcher have been measured by means of an electrostatic analyzer after extraction through a 50 μm orifice.Three gases were studied; Ar, CF4 and SF6, with pressures varying from 5 mtorr to 200 mtorr as a function of the discharge frequency.In the low frequency regime (25–125 kHz) the maximum energy of the ions is close to the applied potential (i.e., 500–600 eV).A secondary ion peak is observed and attributed to the secondary electron ionization.SF6 plasma exhibits a behaviour different to that of Ar and CF4 plasmas because of the high electron attachment of the molecule.

Modeling and Analysis of the Dynamics of a Drill Penetrating a Thin Plate

1986 ◽  
Vol 53 (3) ◽  
pp. 690-694 ◽  
Author(s):  
P. G. Reinhall ◽  
D. W. Storti
Keyword(s):  
Numerical Methods ◽  
Circular Hole ◽  
Composite Plate ◽  
Material Removal ◽  
Simplified Model ◽  
Drilling Process ◽  
Rigid Plate ◽  
Soft Or ◽  
Modeling And Analysis ◽  
Speed Selection

We propose a simplified model of the drilling process which is useful in understanding the problem of noncircular hole production. The dynamics of a drill penetrating a circular hole in a rigid plate are studied analytically, and numerical methods are then used to include the effects of material removal. We show that certain drill trajectories which lead to noncircular holes can be stabilized by material removal. Based on these findings, we recommend careful drill speed selection as a means of minimizing the probability of noncircular hole production, and explain why even this solution may not be sufficient for the case of very soft or composite plate materials.

Plasma Mode Trench Etching with Direct Hydrocarbon Injection

1986 ◽  
Vol 68 ◽  
Author(s):  
Steven D. Leeke ◽  
David Kuan Yu Liu ◽  
James P. McVittie
Keyword(s):  
Plasma Etching ◽  
Vertical Direction ◽  
Side Wall ◽  
Active Species ◽  
Positive Slope ◽  
Plasma Etch ◽  
Energetic Ions ◽  
Interaction Terms ◽  
Etching Profile ◽  
Planar Plasma

AbstractPlanar plasma etching of silicon for fabrication of deep trenches has been studied using the method of factorial design.A highly anisotropic etching profile with a slight positive slope is obtained using SF6, C2C1F5, and CH4 in the low energy plasma etch mode.The anisotropy is attributed to the polymerization of CH4 molecules with the active species in the plasma.The polymer is removed preferentially in the vertical direction by energetic ions from the plasma, leaving the polymer layer on the side wall to inhibit lateral etching of silicon.Good uniformity across the wafer and smooth trench surfaces are obtained with this process.Trench depths of greater than 3μm with less than 0.24μm of undercut are observed.Etch rate measurements were made and found to be greater than 1000 angstroms/minute.Selectivity over the oxide mask is greater than 15:1.By using factorial design to statistically characterize this process, the effects of interactions between various process parameters are studied.Optimal etching conditions are obtained from the interaction terms for the process parameters.The ability to etch deep trenches with smooth surfaces, low damage, low linewidth degredation, and high selectivity make this process useful for many applications in VLSI devices.

Plasma-etching profile model for SiO/sub 2/ contact holes

2002 ◽  
Vol 30 (4) ◽  
pp. 1579-1586 ◽  
Author(s):  
Chunli Liu ◽  
B. Abraham-Shrauner
Keyword(s):  
Plasma Etching ◽  
Profile Model ◽  
Etching Profile

scholarly journals The evolution of lying in well-mixed populations

2019 ◽  
Vol 16 (156) ◽  
pp. 20190211 ◽  
Author(s):  
Valerio Capraro ◽  
Matjaž Perc ◽  
Daniele Vilone
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Statistical Physics ◽  
Complex Dynamics ◽  
Well Being ◽  
Negative Consequences ◽  
The Monte Carlo Method ◽  
Human Experiments ◽  
Moral Behaviour ◽  
Mixed Populations

Lies can have profoundly negative consequences for individuals, groups and even for societies. Understanding how lying evolves and when it proliferates is therefore of significant importance for our personal and societal well-being. To that effect, we here study the sender–receiver game in well-mixed populations with methods of statistical physics. We use the Monte Carlo method to determine the stationary frequencies of liars and believers for four different lie types. We consider altruistic white lies that favour the receiver at a cost to the sender, black lies that favour the sender at a cost to the receiver, spiteful lies that harm both the sender and the receiver, and Pareto white lies that favour both the sender and the receiver. We find that spiteful lies give rise to trivial behaviour, where senders quickly learn that their best strategy is to send a truthful message, while receivers likewise quickly learn that their best strategy is to believe the sender’s message. For altruistic white lies and black lies, we find that most senders lie while most receivers do not believe the sender’s message, but the exact frequencies of liars and non-believers depend significantly on the payoffs, and they also evolve non-monotonically before reaching the stationary state. Lastly, for Pareto white lies we observe the most complex dynamics, with the possibility of both lying and believing evolving with all frequencies between 0 and 1 in dependence on the payoffs. We discuss the implications of these results for moral behaviour in human experiments.

Kinetics and mechanisms of chemical reactions in nonequilibrium-plasma etching of silicon and silicon compounds

Vacuum ◽  
1982 ◽  
Vol 32 (9) ◽  
pp. 529-537 ◽  
Author(s):  
GK Vinogradov ◽  
PI Nevzorov ◽  
LS Polak ◽  
DI Slovetsky
Keyword(s):  
Chemical Reactions ◽  
Plasma Etching ◽  
Nonequilibrium Plasma ◽  
Silicon Compounds
Sign in / Sign up

Export Citation Format

Share Document