High electron mobility InAs[sub 0.8]Sb[sub 0.2] grown on InP substrates by gas source molecular beam epitaxy
2008 ◽
Vol 26
(3)
◽
pp. 1078
◽
Keyword(s):
Keyword(s):
2000 ◽
Vol 39
(Part 2, No. 7B)
◽
pp. L720-L722
◽
2002 ◽
Vol 41
(Part 1, No. 2B)
◽
pp. 1004-1007
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2002 ◽
Vol 49
(3)
◽
pp. 354-360
◽
2002 ◽
Vol 20
(3)
◽
pp. 1200
◽
2004 ◽
Vol 265
(1-2)
◽
pp. 34-40
◽
Keyword(s):
2000 ◽
Vol 47
(5)
◽
pp. 1115-1117
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