High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material
2011 ◽
Vol 29
(2)
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pp. 020601
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2012 ◽
Vol 30
(6)
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pp. 06FF02
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2011 ◽
Vol 29
(2)
◽
pp. 021006
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2008 ◽
Vol 26
(6)
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pp. 1896-1902
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Keyword(s):
2005 ◽
Vol 34
(6)
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pp. 740-745
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