Development of AlGaN-based graded-index-separate-confinement-heterostructure deep UV emitters by molecular beam epitaxy

2013 ◽  
Vol 31 (3) ◽  
pp. 03C117 ◽  
Author(s):  
Haiding Sun ◽  
Jeff Woodward ◽  
Jian Yin ◽  
Adam Moldawer ◽  
Emanuele F. Pecora ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Graded Index ◽  
Deep Uv ◽  
Uv Emitters

scholarly journals High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

2017 ◽  
Vol 110 (22) ◽  
pp. 221107 ◽  
Author(s):  
Anamika Singh Pratiyush ◽  
Sriram Krishnamoorthy ◽  
Swanand Vishnu Solanke ◽  
Zhanbo Xia ◽  
Rangarajan Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetector ◽  
High Responsivity ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Uv

Deep UV light emitting diodes grown by gas source molecular beam epitaxy

2007 ◽  
Vol 19 (8-9) ◽  
pp. 764-769 ◽  
Author(s):  
Sergey Nikishin ◽  
Boris Borisov ◽  
Vladimir Kuryatkov ◽  
Mark Holtz ◽  
Gregory A. Garrett ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Gas Source ◽  
Deep Uv

scholarly journals Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]

2018 ◽  
Vol 124 (13) ◽  
pp. 139901
Author(s):  
Susmita Ghose ◽  
Shafiqur Rahman ◽  
Liang Hong ◽  
Juan Salvador Rojas-Ramirez ◽  
Hanbyul Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetectors ◽  
Deep Uv

scholarly journals High conductivity n-Al06Ga04N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters

2021 ◽  
Author(s):  
Jianfeng Wang ◽  
Burhan SaifAddin ◽  
Christian J. Zollner ◽  
Bastien Bonef ◽  
Abdullah Almogbel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunnel Junctions ◽  
High Conductivity ◽  
Uv Emitters
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