Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films

2019 ◽  
Vol 37 (3) ◽  
pp. 031218
Author(s):  
Soumia Nemmour ◽  
Siham Djoumi ◽  
Fatiha Kail ◽  
Pere Roura-Grabulosa ◽  
Pere Roca i Cabarrocas ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Hydrogen Evolution ◽  
Microcrystalline Silicon

Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells

2009 ◽  
Vol 517 (12) ◽  
pp. 3513-3515 ◽  
Author(s):  
Tao Chen ◽  
Yuelong Huang ◽  
Haiyan Wang ◽  
Deren Yang ◽  
Arup Dasgupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Solar Cells ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon

Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

2011 ◽  
Vol 519 (14) ◽  
pp. 4511-4515 ◽  
Author(s):  
T. Chen ◽  
F. Köhler ◽  
A. Heidt ◽  
Y. Huang ◽  
F. Finger ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Electronic Properties ◽  
Hot Wire ◽  
Microcrystalline Silicon

A narrow process window for the preparation of polytypes of microcrystalline silicon carbide thin films by hot-wire CVD method

2012 ◽  
Vol 358 (17) ◽  
pp. 1987-1989 ◽  
Author(s):  
Norimitsu Yoshida ◽  
Sho Terazawa ◽  
Kotaro Hayashi ◽  
Tomonari Hamaguchi ◽  
Hironori Natsuhara ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Process Window ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Cvd Method

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

2009 ◽  
Vol 517 (12) ◽  
pp. 3507-3512 ◽  
Author(s):  
F. Finger ◽  
O. Astakhov ◽  
T. Bronger ◽  
R. Carius ◽  
T. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide
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