scholarly journals Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication

2019 ◽  
Vol 37 (6) ◽  
pp. 061306 ◽  
Author(s):  
Daniel Staaks ◽  
Zhaoning Yu ◽  
Scott D. Dhuey ◽  
Simone Sassolini ◽  
Kim Y. Lee ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Concentration Effects ◽  
Hard Mask ◽  
Mask Etching ◽  
Nanoscale Fabrication

A thick CESL stressed ultra-small (Lg=40nm) SiGe-channel MOSFET fabricated with 193nm scanner lithography and TEOS hard mask etching

2007 ◽  
Author(s):  
Wen-Shiang Liao ◽  
Tung-Hung Chen ◽  
Hsin-Hung Lin ◽  
Wen-Tung Chang ◽  
Tommy Shih ◽  
...  
Keyword(s):  
Hard Mask ◽  
Mask Etching

The Role of Oxygen on Anisotropy in Chromium Oxide Hard Mask Etching for Sub-Micron Fabrication

2021 ◽  
Vol 20 ◽  
pp. 33-38
Author(s):  
Huseyin Ekinci ◽  
Navid M.S. Jahed ◽  
Mohammad Soltani ◽  
Bo Cui
Keyword(s):  
Chromium Oxide ◽  
Hard Mask ◽  
Mask Etching

A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching

2002 ◽  
Vol 46 (3) ◽  
pp. 349-352 ◽  
Author(s):  
C. Caillat ◽  
S. Deleonibus ◽  
G. Guegan ◽  
M. Heitzmann ◽  
M.E. Nier ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Gate Length ◽  
Hard Mask ◽  
Mask Etching ◽  
20 Nm

Precise Control and Resizing of Polysilicon Gate Length by Hard-Mask Etching

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5519-5525 ◽  
Author(s):  
Masaaki Sato ◽  
Yoshio Kawai
Keyword(s):  
Gate Length ◽  
Hard Mask ◽  
Precise Control ◽  
Polysilicon Gate ◽  
Mask Etching

Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning

2006 ◽  
Vol 504 (1-2) ◽  
pp. 117-120 ◽  
Author(s):  
Vladimir Bliznetsov ◽  
Rakesh Kumar ◽  
Huizhen Lin ◽  
Kah-Wee Ang ◽  
Won Jong Yoo ◽  
...  
Keyword(s):  
Integrated Process ◽  
Hard Mask ◽  
Mask Etching
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