A thick CESL stressed ultra-small (Lg=40nm) SiGe-channel MOSFET fabricated with 193nm scanner lithography and TEOS hard mask etching
2002 ◽
Vol 46
(3)
◽
pp. 349-352
◽
2006 ◽
Vol 19
(4)
◽
pp. 455-464
◽
1998 ◽
Vol 37
(Part 1, No. 10)
◽
pp. 5519-5525
◽