Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Download Full-text

Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper

Electrochemical and Solid-State Letters ◽

10.1149/1.2844207 ◽

2008 ◽

Vol 11 (5) ◽

pp. H107 ◽

Cited By ~ 15

Author(s):

L. Wu ◽

E. Eisenbraun

Keyword(s):

Atomic Layer Deposition ◽

Hydrogen Plasma ◽

Atomic Layer ◽

Plasma Treatments ◽

Layer Deposition

Download Full-text

Hydrophobicity enhancement of Al2O3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

Applied Surface Science ◽

10.1016/j.apsusc.2014.03.135 ◽

2014 ◽

Vol 305 ◽

pp. 554-561 ◽

Cited By ~ 9

Author(s):

Kamran Ali ◽

Kyung-Hyun Choi ◽

Chang Young Kim ◽

Yang Hoi Doh ◽

Jeongdai Jo

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Plasma Treatment ◽

Atomic Layer ◽

Layer Deposition ◽

Polymeric Substrates

Download Full-text

Atomic Layer Deposition of Aluminum Thin Films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma

Electrochemical and Solid-State Letters ◽

10.1149/1.1503204 ◽

2002 ◽

Vol 5 (10) ◽

pp. C91 ◽

Cited By ~ 32

Author(s):

Yong Ju Lee ◽

Sang-Won Kang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Hydrogen Plasma ◽

Atomic Layer ◽

Layer Deposition

Download Full-text

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Materials ◽

10.3390/ma13051058 ◽

2020 ◽

Vol 13 (5) ◽

pp. 1058

Author(s):

Katherine Hansen ◽

Melissa Cardona ◽

Amartya Dutta ◽

Chen Yang

Keyword(s):

Atomic Layer Deposition ◽

Ultrathin Films ◽

Hydrogen Plasma ◽

Atomic Layer ◽

Blue Shift ◽

Transition Metal Nitrides ◽

Temperature Plasma ◽

Promising Alternative ◽

Layer Deposition ◽

Post Deposition

Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma-enhanced atomic layer deposition (PE-ALD) of non-stoichiometric TiN0.71 on lattice-matched and -mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post-deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post-deposition was found to tune the plasmonic properties of the films, resulting in a blue-shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.

Download Full-text