Ellipsometry investigation of nucleation and growth of electron cyclotron resonance plasma deposited silicon films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578479 ◽

1993 ◽

Vol 11 (4) ◽

pp. 1686-1691 ◽

Author(s):

M. Li ◽

Y. Z. Hu ◽

J. Wall ◽

K. Conrad ◽

E. A. Irene

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Nucleation And Growth ◽

Electron Cyclotron ◽

Silicon Films ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581481 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2751-2756 ◽

Author(s):

B. B. Jagannathan ◽

R. L. Wallace ◽

W. A. Anderson

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Discharge ◽

Electron Cyclotron ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Electron Cyclotron Resonance Plasma ◽

Structural And Electrical Properties ◽

Resonance Plasma

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Preparation and properties of amorphous silicon films produced using electron cyclotron resonance plasma

10.1063/1.41033 ◽

1991 ◽

Author(s):

Vikram L. Dalal ◽

Ralph D. Knox ◽

B. Moradi ◽

A. Beckel ◽

S. VanZante

Keyword(s):

Amorphous Silicon ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Silicon Films ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Preparation of doped hydrogenated amorphous silicon films by microwave electron‐cyclotron‐resonance plasma discharge deposition

Journal of Applied Physics ◽

10.1063/1.338013 ◽

1987 ◽

Vol 61 (5) ◽

pp. 2084-2087 ◽

Author(s):

M. Kitagawa ◽

K. Setsune ◽

Y. Manabe ◽

T. Hirao

Keyword(s):

Amorphous Silicon ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Hydrogenated Amorphous Silicon ◽

Plasma Discharge ◽

Electron Cyclotron ◽

Silicon Films ◽

Electron Cyclotron Resonance Plasma ◽

Hydrogenated Amorphous ◽

Resonance Plasma

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Influence of Local Feature of Electron Cyclotron Resonance Plasma on the Formation of Amorphous Hydrogenated Silicon Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.285 ◽

1995 ◽

Vol 34 (Part 1, No. 1) ◽

pp. 285-291 ◽

Author(s):

Wei Chen ◽

Shoji Miyake ◽

Tomio Ariyasu ◽

BunkeiKyou

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Local Feature ◽

Silicon Films ◽

Electron Cyclotron Resonance Plasma ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

Applied Physics Letters ◽

10.1063/1.102487 ◽

1990 ◽

Vol 56 (15) ◽

pp. 1424-1426 ◽

Author(s):

S. J. Pearton ◽

U. K. Chakrabarti ◽

A. P. Kinsella ◽

D. Johnson ◽

C. Constantine

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110223 ◽

2021 ◽

pp. 110223

Author(s):

Sixu Lin ◽

Dong Xie ◽

Yongliang Tang ◽

Yiwen Wang ◽

Fengjuan Jing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Nitrogen Flow ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

Applied Surface Science ◽

10.1016/0169-4332(93)90239-8 ◽

1993 ◽

Vol 68 (4) ◽

pp. 575-582 ◽

Author(s):

M. Diani ◽

J.L. Bischoff ◽

L. Kubler ◽

D. Bolmont

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

X Ray ◽

Photoelectron Diffraction ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

Applied Physics Letters ◽

10.1063/1.114847 ◽

1995 ◽

Vol 67 (20) ◽

pp. 2934-2935 ◽

Author(s):

A. Weber ◽

R. Poeckelmann ◽

C.‐P. Klages

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low-damage electron-beam-assisted dry etching of GaAs and AlGaAs using electron cyclotron resonance plasma electron source

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586892 ◽

1993 ◽

Vol 11 (6) ◽

pp. 2288 ◽

Author(s):

Heiji Watanabe

Keyword(s):

Electron Beam ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Dry Etching ◽

Plasma Electron ◽

Electron Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Electron Source ◽

Resonance Plasma

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