Characterization of a slot antenna microwave plasma source for hydrogen plasma cleaning

1995 ◽  
Vol 13 (4) ◽  
pp. 2074-2085 ◽  
Author(s):  
D. Korzec ◽  
F. Werner ◽  
A. Brockhaus ◽  
J. Engemann ◽  
T. P. Schneider ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Plasma Source ◽  
Slot Antenna ◽  
Plasma Cleaning

Characterization of the slot antenna microwave plasma source

2001 ◽  
Vol 29 (1) ◽  
pp. 13-18 ◽  
Author(s):  
Cong-Feng Wu ◽  
Ru-Juan Zhan ◽  
Xiao-Hui Wen ◽  
Wei-Dong Huang
Keyword(s):  
Microwave Plasma ◽  
Plasma Source ◽  
Slot Antenna

scholarly journals Characterization of hydrogen plasma in a permanent ring magnet based helicon plasma source for negative ion source research

2019 ◽  
Vol 61 (6) ◽  
pp. 065003 ◽  
Author(s):  
A Pandey ◽  
Debrup Mukherjee ◽  
Dipshikha Borah ◽  
M Bandyopadhyay ◽  
Himanshu Tyagi ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Source ◽  
Ion Source ◽  
Negative Ion ◽  
Helicon Plasma ◽  
Ring Magnet

Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)

1990 ◽  
Vol 204 ◽  
Author(s):  
T. P. Schneider ◽  
J. Cho ◽  
J. Vander Weide ◽  
S.E. Wells ◽  
G. Lucovsky ◽  
...  
Keyword(s):  
Surface Characterization ◽  
Hydrogen Plasma ◽  
Surface States ◽  
Diagnostic Techniques ◽  
Gas Analysis ◽  
Plasma Cleaning ◽  
Low Energy Electron ◽  
Diffraction Patterns ◽  
Surface Diffraction

ABSTRACTThis study details low pressure and low temperature cleaning of Si(100) surfaces. The properties of Si surfaces exposed to variations in plasma generated H are described. The diagnostic techniques used to study the processing conditions are residual gas analysis (RGA) and emission spectroscopy. The surface is characterized by low energy electron diffraction (LEED) and angle resolved uv-photoemission spectroscopy (ARUPS). During the cleaning, Si complexes are formed which indicates the removal of species from the Si(100) surface. Plasma cleaning at 300°C results in a Si(100) surface with 2×1 surface diffraction patterns as detected by LEED. Measurements by ARUPS with He I radiation show the absence of Si surface states on the Hpassivated surface. The ARUPS measurements also indicate that the H begins to desorb from the Si(100) H-passivated surface at ∼500°C.

Slot antenna 2.45 GHz microwave plasma source

1994 ◽  
Vol 3 (4) ◽  
pp. 473-481 ◽  
Author(s):  
F Werner ◽  
D Korzec ◽  
J Engemann
Keyword(s):  
Microwave Plasma ◽  
Plasma Source ◽  
Slot Antenna

Mechanisms for dose retention in conformal arsenic doping using a radial line slot antenna microwave plasma source

2015 ◽  
Vol 117 (22) ◽  
pp. 224904 ◽  
Author(s):  
Hirokazu Ueda ◽  
Peter L. G. Ventzek ◽  
Masahiro Oka ◽  
Yuuki Kobayashi ◽  
Yasuhiro Sugimoto
Keyword(s):  
Microwave Plasma ◽  
Plasma Source ◽  
Slot Antenna ◽  
Radial Line ◽  
Arsenic Doping

Experimental Evidence for the Dominance of vuv Photons in Remote Hydrogen Plasma Treatments

1998 ◽  
Vol 544 ◽  
Author(s):  
R. Wilken ◽  
A. Hollander ◽  
J. Behnisch
Keyword(s):  
Vacuum Ultraviolet ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Plasma Source ◽  
Power Input ◽  
Photon Flux ◽  
Fluorescence Measurements ◽  
Plasma Treatments ◽  
Uv Photons

AbstractThe flux of vacuum ultraviolet (VUV) and ultraviolet (UV) photons from a hydrogen plasma was detected by fluorescence measurements of sodium salicylate sheets with and without a MgF2 window. In order to expose the samples to the same photon flux in all experiments, the power input to the microwave plasma source was adjusted. Polyethylene (PE), polypropylene (PP), and polystyrene (PS) were treated with VUV radiation or with a remote hydrogen plasma. The mass loss and the CH-absorption loss were recorded by in situ quartz crystal micro balance and by in situ IR reflection absorption spectroscopy, respectively. The VUV irradiation and plasma treatment caused similar effects in the case of PE, PP showed an increased polymer ablation in plasma treatments, and for PS a negligible loss in mass and CH absorption was detected in plasma and VUV treatments.

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