Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)
1986 ◽
Vol 4
(4)
◽
pp. 890
◽
1992 ◽
Vol 10
(2)
◽
pp. 766
1994 ◽
Vol 137
(1-2)
◽
pp. 187-194
◽
Keyword(s):
1996 ◽
Vol 35
(Part 2, No. 3B)
◽
pp. L366-L369
◽
Keyword(s):