The effects of annealing encapsulant and ambient on the barrier height of WNx/GaAs contact and self-aligned gate field effect transistor fabrication

1988 ◽  
Vol 6 (6) ◽  
pp. 1779 ◽  
Author(s):  
S. K. Cheung
Keyword(s):  
Barrier Height ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Transistor Fabrication

High-yield GaN nanowire synthesis and field-effect transistor fabrication

2006 ◽  
Vol 35 (4) ◽  
pp. 670-674 ◽  
Author(s):  
Huaqiang Wu ◽  
Ho-Young Cha ◽  
M. Chandrashekhar ◽  
Michael G. Spencer ◽  
Goutam Koley
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Gan Nanowire ◽  
Effect Transistor ◽  
Nanowire Synthesis ◽  
Transistor Fabrication

Synthesis and Characterization of Anthracene Derivative for Organic Field-Effect Transistor Fabrication

2012 ◽  
Vol 12 (5) ◽  
pp. 4269-4273 ◽  
Author(s):  
Pramod Kandoth Madathil ◽  
Jae-Geon Lim ◽  
Tae-Dong Kim ◽  
Dirk Beckmann ◽  
Alexey Mavrinskiy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Synthesis And Characterization ◽  
Organic Field Effect Transistor ◽  
Anthracene Derivative ◽  
Effect Transistor ◽  
Transistor Fabrication

High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

2008 ◽  
Vol 92 (24) ◽  
pp. 242111 ◽  
Author(s):  
Jeong Min Baik ◽  
Myung Hwa Kim ◽  
Christopher Larson ◽  
Xihong Chen ◽  
Shujing Guo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Single Nanowire ◽  
Tio2 Nanowire ◽  
Effect Transistor ◽  
Nanowire Synthesis ◽  
Transistor Fabrication

scholarly journals Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Sachin Gupta ◽  
F. Rortais ◽  
R. Ohshima ◽  
Y. Ando ◽  
T. Endo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Metal Contacts ◽  
Back Gate ◽  
Vapor Deposition Technique ◽  
Effect Transistor

AbstractTwo-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage (Vg) shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (at Vg = 0V), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of positive gate voltage, SBH shows a reduction, which reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

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