High frequency reactive ion etching of silylated photoresist

1994 ◽  
Vol 12 (3) ◽  
pp. 1351 ◽  
Author(s):  
Kent M. Kalpakjian
Keyword(s):  
High Frequency ◽  
Reactive Ion Etching ◽  
Ion Etching

Damage free Al reactive-ion-etching for high frequency SAW devices

2003 ◽  
Author(s):  
A. Yuhara ◽  
T. Mizutani ◽  
N. Hosaka ◽  
J. Yamada ◽  
A. Iwama
Keyword(s):  
High Frequency ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Saw Devices

scholarly journals Влияние металлических масок на согласование нижнего электрода с высокочастотным генератором смещения при реактивно-ионном травлении массивных подложек

2021 ◽  
Vol 47 (11) ◽  
pp. 44
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов
Keyword(s):  
Reflection Coefficient ◽  
High Frequency ◽  
Reactive Power ◽  
Reactive Ion Etching ◽  
Substrate Holder ◽  
Lower Electrode ◽  
Ion Etching ◽  
Power Reflection Coefficient ◽  
Power Component

The effect of metal masks on the matching of the lower electrode with a high-frequency bias generator during selective reactive-ion etching through the mask of massive substrates in freon-14 has been studied theoretically and experimentally. It is shown that masks with a substrate coating above 30% lead to an increase in the reactive power component at distances from the center close to the substrate radius. The absence of influence on the specific reactive power of the thickness and material of the masks is established. It is experimentally shown that masks with any practically significant coating coefficient of the substrate, connected to the lower electrode through the substrate holder, improve the matching, reducing the power reflection coefficient.

GaAs Photonic Crystals on SiO2Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6259-6263 ◽  
Author(s):  
Tadashi Saitoh ◽  
Tetsuomi Sogawa ◽  
Masaya Notomi ◽  
Toshiaki Tamamura ◽  
Satoshi Kodama ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Wafer Bonding ◽  
High Frequency ◽  
Reactive Ion Etching ◽  
Very High Frequency ◽  
Ion Etching ◽  
Very High

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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