The Influence of Metal Masks on Matching of the Lower Electrode and a High-Frequency Bias Generator at Reactive Ion Etching of Large Substrates

Author(s):  
S. D. Poletayev ◽  
A. I. Lyubimov
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов

The effect of metal masks on the matching of the lower electrode with a high-frequency bias generator during selective reactive-ion etching through the mask of massive substrates in freon-14 has been studied theoretically and experimentally. It is shown that masks with a substrate coating above 30% lead to an increase in the reactive power component at distances from the center close to the substrate radius. The absence of influence on the specific reactive power of the thickness and material of the masks is established. It is experimentally shown that masks with any practically significant coating coefficient of the substrate, connected to the lower electrode through the substrate holder, improve the matching, reducing the power reflection coefficient.


2003 ◽  
Author(s):  
A. Yuhara ◽  
T. Mizutani ◽  
N. Hosaka ◽  
J. Yamada ◽  
A. Iwama

2021 ◽  
Vol 91 (4) ◽  
pp. 657
Author(s):  
С.Д. Полетаев ◽  
А.И. Любимов

This paper presents theoretical and experimental results on reactive ion etching of massive substrates in freon-14 with RF bias at the lower electrode. A hypothesis is proposed according to which a large-sized substrate violates the matching of the lower electrode with the RF generator by adding an additional reactive component to the impedance of the lower electrode. A numerical simulation of reactive ion etching with substrates of various sizes in a CF4 environment is performed . The simulation results showed a significant increase in the reactive component of RF power at the lower electrode if the substrate area exceeds 50% of the area of the lower electrode, which is consistent with the proposed hypothesis. It has been experimentally shown that the etching of massive substrates violates the matching of the lower electrode with the RF generator. A special design of the substrate holder for massive substrates has been developed. It is shown that such a substrate holder significantly improves the matching of the RF generator with the lower electrode, especially when adding 0.3-0.9 l/h argon to the plasma-forming mixture.


2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6259-6263 ◽  
Author(s):  
Tadashi Saitoh ◽  
Tetsuomi Sogawa ◽  
Masaya Notomi ◽  
Toshiaki Tamamura ◽  
Satoshi Kodama ◽  
...  

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata

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